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SEMICONDUCTOR DEVICE FABRICATION AN OVERVIEW Presented to EE 1001 29 September 2015 by Stan Burns MWAH 153.

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Presentation on theme: "SEMICONDUCTOR DEVICE FABRICATION AN OVERVIEW Presented to EE 1001 29 September 2015 by Stan Burns MWAH 153."— Presentation transcript:

1 SEMICONDUCTOR DEVICE FABRICATION AN OVERVIEW Presented to EE 1001 29 September 2015 by Stan Burns sburns@d.umn.edu MWAH 153

2 OUTLINE èWhat is a Monolithic (“Single Stone”) Integrated Circuit (IC)? èFabrication and Integrated Circuit Overview èDimensions and Units èHistorical Perspectives èState-of-the-Art in Size and Density-Moore’s “Law” èMaterials èPhotolithography èBasic process sequence èTypical Device Cross-Sections èOther Devices and Technologies èBasic Processing Steps Summary èPackaging èChallenges and Opportunities in the Semiconductor Industry For EE Graduates

3 3 IC Fabrication Overview Procedure of Silicon Wafer Production Raw material ― Polysilicon nuggets purified from sand Crystal pulling Si crystal ingot Slicing into Si wafers using a diamond saw Final wafer product after polishing, cleaning and inspection A silicon wafer fabricated with microelectronic circuits

4 DIMENSIONS AND UNITS  1 micrometer (1  m) = 10 -6 m = 10 -4 cm è1 Å = 10 -10 m = 10 -8 cm (Å =Angstrom)  10,000 Å = 1  m = 1000 nm è1 nanometer (1 nm) = 10 -9 m = 10 Å  Wavelength of visible light 0.4  m(violet) to 0.7  m(red) {400 nm to 700 nm, 4,000 Å to 7,000 Å }  1 mil = 0.001 inch = 25.4  m èSheet of notebook paper about 4 mils  1 human hair = 75  m to 100  m = 75,000-100,000 nm èAtomic spacing in a crystal ~ 3 to 5 Å  Fingernail growth rate about 1-3  m/hour ( Not personally verified ) èAggressive production minimum feature sizes, tens of nm, 14-16 nm used in the iPhone 6S A9 microprocessor.

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8 Stanley G. Burns UMD-ECE

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12 <128 GByte $35, @ Best Buy 27 Sept. 2015) 16 nm

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19 BASIC PROCESSING STEPS Design Then Repeated Application Of: Oxidation Nitridation Photolithography Wet Etching (Chemical) Dry Etching (Plasma) Diffusion Evaporation Sputtering Plasma Assisted Deposition Ion Implantation Epitaxy Many Processing Steps are at temperatures to 1200°C

20 OTHER DEVICES AND TECHNOLOGIES èThin-Film Transistors (TFT) èDisplays-Liquid Crystal Displays (LCD), Plasma, LED Backlit, etc. èPhotonic-Light Emitting Diodes (LED), Organic Light Emitting Diodes (OLED), LASERS, Optical Chips, etc.) èPhotovoltaics-Conventional Crystalline and Flexible Thin- Film èDevices and Systems on Flexible Substrates èMicro-Electro-Mechanical Systems (MEMS) integration of mechanical elements, sensors, actuators, and electronics on a common silicon substrate through microfabrication technology. Electronics are fabricated using integrated circuit (IC) process sequences (e.g., CMOS, Bipolar, or BICMOS processes) è Micromechanical components are fabricated using compatible "micromachining" processes that selectively etch away parts of the silicon wafer or add new structural layers to form the mechanical and electromechanical devices.

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22 Challenges in the Semiconductor Industry For EE Graduates èDesign devices èDesign circuits and systems èDevice modeling èSystem design and fabrication èCircuit/system simulations èTestability èMaterials (Si, III-V, Graphene èHow small? Nanomaterials? èHow large? Wafer Scale? èSpeed and performance, for analog, digital and mixed- mode applications èIncreased functionality è Biological integration è Optoelectronic integration è Displays è Sensors including “Wearables) è MEMs (Design/Application) è Non-traditional substrates è Packaging è Process development è Process Control è “Tool” and plant design è Cradle to grave materials handling


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