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Published bySheryl Fields Modified over 9 years ago
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Integrated Circuit Devices Professor Ali Javey Summer 2009 MOSFETs Reading: Chapters 17 & 18
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The First Transistor
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1956 Physics Nobel Prize
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Invention of the Field-Effect Transistor In 1935, a British patent was issued to Oskar Heil. A working MOSFET was not demonstrated until 1955.
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Today’s MOSFET Technology Gate oxides as thin as 1.2 nm can be manufactured reproducibly. Large tunneling current through the oxide limits oxide-thickness reduction.
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Introduction to the MOSFET Basic MOSFET structure and IV characteristics
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Introduction to the MOSFET Two ways of representing a MOSFET:
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Complementary MOSFETs (CMOS) When V g = V dd, the NFET is on and the PFET is off. When V g = 0, the PFET is on and the NFET is off. NFET PFET
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Qualitative discussion: n-MOSFET V G > V T ; V DS 0 I D increases with V DS V G > V T ; V DS small, > 0 I D increases with V DS, but rate of increase decreases. V G > V T ; V DS pinch-off I D reaches a saturation value, I D,sat The V DS value is called V DS,sat V G > V T ; V DS > V DS,sat I D does not increase further, saturation region.
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Threshold voltage for NMOS and PMOS When V G = V T, s = 2 F ; we get expression for V T. Ideal n-channel (p-silicon) device both terms positive Ideal p-channel (n-silicon) device both terms negative Si / ox = = 11.9 / 3.9 3 F > 0 means p-type F < 0 means n-type
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How to Measure the V T of a MOSFET V t is measured by extrapolating the I ds versus V gs (at low V ds ) curve to I ds = 0. V ds = 10mV I ds V gs V t
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Quantitative I D -V DS Relationships “Square Law” ; I D will increase as V DS is increased, but when V G – V DS = V T, pinch-off occurs, and current saturates when V DS is increased further. This value of V DS is called V DS,sat. i.e., V DS,sat = V G – V T and the current when V DS = V DS,sat is called I DS,sat. ; Here, C ox is the oxide capacitance per unit area, C ox = ox / x ox
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I D -V DS characteristics expected from a long channel ( L << L) MOSFET (n-channel), for various values of V G
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