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Penn ESE370 Fall2014 -- DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 10: September 19, 2014 MOS Transistor Operating Regions Part 1
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Today MOS Transistor Topology Threshold Operating Regions –Resistive –Saturation –Velocity Saturation –Subthreshold Penn ESE370 Fall2014 -- DeHon 2
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Last Time Penn ESE370 Fall2014 -- DeHon 3
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Depletion region excess carriers depleted Penn ESE370 Fall2014 -- DeHon 4 Refinement
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Body Contact Fourth terminal Also effects fields Usually common across transistors Penn ESE370 Fall2014 -- DeHon 5
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No Field V GS =0, V DS =0 Penn ESE370 Fall2014 -- DeHon 6
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Apply V GS >0 Accumulate negative charge –Repel holes (fill holes) Penn ESE370 Fall2014 -- DeHon 7 + + + + - - - - - - - - -
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Channel Evolution Increasing Vgs Penn ESE370 Fall2014 -- DeHon 8
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Gate Capacitance Penn ESE370 Fall2014 -- DeHon 9 Changes based on operating region.
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Inversion Surface builds electrons –Inverts to n-type –Draws electrons from n + source Penn ESE370 Fall2014 -- DeHon 10
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Threshold Voltage where strong inversion occurs threshold voltage –Around 2 ϕ F –Engineer by controlling doping (N A ) Penn ESE370 Fall2014 -- DeHon 11
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Resistive Region V GS >V T, V DS small Penn ESE370 Fall2014 -- DeHon 12
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Resistive Region V GS >V T, V DS small V GS fixed looks like resistor –Current linear in V DS Penn ESE370 Fall2014 -- DeHon 13
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Linear (Resistive) Region Penn ESE370 Fall2014 -- DeHon 14
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Penn ESE370 Fall2014 -- DeHon 15 Blue curve marks transition from Linear to Saturation Linear (Resistive) Region
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Penn ESE370 Fall2014 -- DeHon 16 Dimensions Channel Length (L) Channel Width (W) Oxide Thickness (T ox )
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Preclass Ids for identical transistors in parallel? Penn ESE370 Fall2014 -- DeHon 17
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Preclass Ids for identical transistors in series? –(Vds small) Penn ESE370 Fall2014 -- DeHon 18
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Transistor Strength (W/L) Penn ESE370 Fall2014 -- DeHon 19 S D
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Transistor Strength (W/L) Shape dependence match Resistance intuition –Wider = parallel resistors decrease R –Longer = series resistors increase R Penn ESE370 Fall2014 -- DeHon 20 S D
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L drawn vs. L effective Doping not perfectly straight Spreads under gate Effective L smaller than draw gate width Penn ESE370 Fall2014 -- DeHon 21
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Channel Voltage Voltage varies along channel Think of channel as resistor Penn ESE370 Fall2014 -- DeHon 22
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Preclass 2 What is voltage in the middle of a resistive medium? –(halfway between terminals) Penn ESE370 Fall2014 -- DeHon 23
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Voltage in Channel Think of channel as resistive medium –Length = L –Area = Width * Depth(inversion) What is voltage in the middle of the channel? –L/2 from S and D ? Penn ESE370 Fall2014 -- DeHon 24
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Channel Voltage Voltage varies along channel If think of channel as resistor –Serves as a voltage divider between V S and V D Penn ESE370 Fall2014 -- DeHon 25
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Impact on Inversion What happens when –Vgs=2Vth ? –Vds=2Vth? What is Vmiddle-Vs? Penn ESE370 Fall2014 -- DeHon 26
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Voltage along Channel What is V(x)? Penn ESE370 Fall2014 -- DeHon 27 x=0x=L x V(x)
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Voltage along Channel What is V(x)? Penn ESE370 Fall2014 -- DeHon 28 x=0x=L x V(x) Vs Vd
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Voltage along Channel What is V(x)? Penn ESE370 Fall2014 -- DeHon 29 x=0x=L x V(x) Vs Vd
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Voltage along Channel What is V(x)? Penn ESE370 Fall2014 -- DeHon 30 x=0x=L x V(x) Vs Vd
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Channel Field When voltage gap V G -V x drops below V TH, drops out of inversion –Occurs when: V GS -V DS < V TH –What does this mean about conduction? Penn ESE370 Fall2014 -- DeHon 31
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Preclass 3 What is Vm? Penn ESE370 Fall2014 -- DeHon 32
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Channel Field When voltage gap V G -V x drops below V T, drops out of inversion –Occurs when: V GS -V DS < V T –What is voltage at Vmiddle if conduction stops? –What does that mean about conduction? Penn ESE370 Fall2014 -- DeHon 33
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Contradiction? Vg-Vx < Vt cutoff (no current) No current Vg-Vx=Vgs Vg-Vx=Vgs > Vt current flows Penn ESE370 Fall2014 -- DeHon 34
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Way out? Vg-Vx < Vt cutoff (no current) No current Vg-Vx=Vgs Vg-Vx=Vgs > Vt current flows Penn ESE370 Fall2014 -- DeHon 35 Act like Vds at Vgs-Vt
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Channel Field When voltage gap V G -V x drops below V T, drops out of inversion –Occurs when: V GS -V DS < V T –Channel is “pinched off” Penn ESE370 Fall2014 -- DeHon 36
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Channel Field When voltage gap V G -V x drops below V T, drops out of inversion –Occurs when: V GS -V DS < V T –Channel is “pinched off” –Current will flow, but cannot increase any further Penn ESE370 Fall2014 -- DeHon 37
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Pinch Off When voltage drops below V T, drops out of inversion –Occurs when: V GS -V DS < V T Conclusion: –current cannot increase with V DS once V DS > V GS -V T Penn ESE370 Fall2014 -- DeHon 38
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Saturation In saturation, V DS-effective =V x = V GS -V T Becomes: Penn ESE370 Fall2014 -- DeHon 39
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Saturation V DS > V GS -V T Penn ESE370 Fall2014 -- DeHon 40
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Penn ESE370 Fall2014 -- DeHon 41 Blue curve marks transition from Linear to Saturation Saturation Region
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Switching Operation Consider Inverter Start with in=0V Output voltage? What does first-order model say about NFET? Penn ESE370 Fall2014 -- DeHon 42
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Switching Operation Input rises from 0V When cross into new region? What region cross into? Ids Current? What happens to Ids as V continues to rise? What is happening to Vout? Penn ESE370 Fall2014 -- DeHon 43
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Switching Operation Input reches Vdd When does NFET change operating regions? Which region move into? What’s happening to Vout? What region when settles to static voltage? Penn ESE370 Fall2014 -- DeHon 44
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Penn ESE370 Fall2014 -- DeHon 45 Retrace Transition
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Approach Identify Region Drives governing equations Use to understand operation Penn ESE370 Fall2014 -- DeHon 46
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Big Idea 3 Regions of operation for MOSFET –Subthreshold –Resistive –Saturation Penn ESE370 Fall2014 -- DeHon 47
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Admin Text 3.3.2 – highly recommend read –Second half on Friday HW4 out –Get started over weekend Penn ESE370 Fall2014 -- DeHon 48
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