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Chapter 2 MOS Transistor Theory. NMOS Operation Region.

Published byLorena Kennedy Modified over 9 years ago

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Presentation on theme: "Chapter 2 MOS Transistor Theory. NMOS Operation Region."— Presentation transcript:

1 Chapter 2 MOS Transistor Theory

2 NMOS Operation Region

3 Transistor  n =2  P

4 I-V Curve of MOS

5 Intrinsic MOS Capacitance C O =WLC ox

6 Diffusion Capacitance C sb =AS*C jbs +PS*C jbssw In SPICE, simulator will extract AS,AD,PS,PD parameters to calculate the diffusion capacitance of each MOS.

7 Non-ideal I-V Effects

8 Channel Length Modulation

9 Body Effect Body effect coefficient For example If V sb =1.1 V, then V t =0.68 V HW: Exercise 2.6

10 Junction Leakage I D = I S [e VD/vt -1]

11 Gate leakage

12 Temperature Dependence In SPICE, all the simulations should pass all the spec. temperature, for example, -40~120  C.

13 Inverter DC Characteristic C: PMOS and NMOS all in the saturation region

14 Beta Ratio Beta ratio>1 =  HI-skewed Beta ratio=1 =  Unskewed Beta ratio<1 =  LO-skewed

15 Noise Margin

16 Ratioed Inverter

17 Pseudo-nMOS Inverter

18 Some Issues HW: Exercise 2.21 & 2.22

19 Tristate Inverter Charge sharing effects

20 RC Circuit Model

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