1. Preparation chamber 1.Chamber status 2.Preparation methods 3.Results: photocurrent, stoichoimetric control 4.Next step

2. 1. Chamber status  Verdampfer  Blendenmodul  Laser  Control system test  Thickness monitor  Cathode heating  High voltage  Shutter  Cathode plug

3. 2.Methods Cu-sampleSi-waferCu-cathode standard712 sandwich001 co-evaporation010

4. 3. Results Vacuum in the experiment #05-06-16 Photocurrent #05-05-31 Vacuum is not good enough

5. 3. Results Stoichiometric control: Cs/Te ~ 2 NrSub. Te thickness Cs thickness Cs/Te PIXE RBS #05-05-31Cu10 nm20 nm0.550.44 #05-06-16Cu10 nm68 nm\1.9 #05-06-22Si10 nm70 nm1.6\ #05-06-23 Co-evap. Si10 nm46 nm0.8 It is hard to control.

6. Stoichiometric rate measure (example: #05-05-31 CsTe on Cu) 1. PIXE: Cs/Te=0.55 (calculated by GUPIX, Dr. Grambole) 2. RBS: Cs/Te=0.44 (calculated by XRUMP, Hr. Zhou)

7.  photocurrent measurement  Photocurrent pulse

8. 4.Next step 1.Chamber cleaning (10 -10 mbar) 2.Mo cathode polishing (0.1µm) 3.Clean-room rebuilding Homepage: https://www.fz-rossendorf.de/projects/CARE/index.htm Logbuch: https://www.fz-rossendorf.de/pls/rois/elbe.srflogbook.data

9. NrsubstratumMethodTeCsCs/TePhotocurr.Vacuumcomment nm mbar #03-16-1Custandard30.313.1First test #03-16-2Custandard1020.310 -7 No HV #03-17Custandard12.314.92*10 -7 No HV #03-18-1Custandard7.853.90.1-0.7µA4.3*10 -7 First photocurrent #03-23-2Custandard7.8690.4µA3.8*10 -7 QE scan inhomogeneous Improve sources, polish Cu samples, increase high voltage #05-05-31Custandard10200.51µA @1mW #05-06-03Cu-cathodestandard10200.4µA @2mW2.5*10 -6 unpolished #05-06-16Custandard10.2681.91.2µA @2mW3.0*10 -6 #05-06-22Sistandard10.270.4\2.5*10 -6 #05-06-23SiCo-evap.10.046\ First test on co-evaporation #05-06-23cCu-cathodestandard8170.3µA @2mW #05-06-28Cu-cathodeSandwich8500.25µA @2mW2.5*10 -6

10. Thickness Quartz thickness monitor STM-1

11. Co-evaporation #05-06-23

12. RBS for thickness and atom rate