1. ANODIC BONDING – WAYS OF SURFACE CLEANING
Investigating different ways to clean the wafer surfaces for the anodic bonding process:
Piranha bath ( H2SO4 + H2O2)
Oxygen plasma
Piranha bath + Oxygen plasma
CMP + RCA
RCA (NH4OH HF HCl)
Pyrex #
Silicon #
525 µm
380 µm
350°C 1h
Ibonding
1000 V
10 min
Gently cooling
10% Ibonding

2. ANODIC BONDING – WAYS OF SURFACE CLEANING
Cleaning only with Piaranha
350°C 1h
20 mA
1000 V
10 min
Gently cooling
1.27 mA
16/01/2012

3. ANODIC BONDING – WAYS OF SURFACE CLEANING
Cleaning only with Oxygen plasma
350°C 1h
3.8 mA
1000 V
40 min
Gently cooling
0.38 mA
16/01/2012

4. ANODIC BONDING – WAYS OF SURFACE CLEANING
Cleaning with Oxygen plasma + Piranha
350°C 1h
10 mA
1000 V
10 min
Gently cooling
0.93 mA
16/01/2012

5. ANODIC BONDING – WAYS OF SURFACE CLEANING
Pyrex #
Silicon # 33297
Cleaning with CMP + RCA
1000 V
350°C
Max 8.5 mA  0.85 mA in 15 min
16/01/2012

6. ANODIC BONDING – WAYS OF SURFACE CLEANING
Pyrex #
Silicon # 22095
Cleaning with RCA
350°C
1.45 h
14 mA
1000 V
12 min
Gently cooling
0.89 mA
16/01/2012

7. ANODIC BONDING – Direct bonding
Pyrex #
Silicon # 3644
Wafer for LHCb
Cleaning with Piranha
1000 V
350°C
Max 6.2 mA  0.7 mA in 15 min
16/01/2012