1. 1 IEE5668 Noise and Fluctuations Prof. Ming-Jer Chen Dept. Electronics Engineering National Chiao-Tung University 02/25/2015 Lecture: Introduction

2. 2 For Bio- and/or Electronic Devices at the Nanometer Dimensions, there are extrinsic noise sources, such as the RF Interference, AC power line, ground currents, etc. Extrinsic Noise can be eliminated via Engineering.

3. 3 But, Intrinsic Noise (created inside the device) cannot be eliminated; Intrinsic Noise can only be managed or minimized; Because Intrinsic noise is a fundamental (fluctuating) process; it is Created by Nature. See a paper “ The Noise is the Signal”. (IBM Dr. Rolf Landauer, Nature, p. 658, 1998)

4. 4 This is a Statistical (Fluctuating) Experiment: Events and Outcomes Random Variables Probability Variable Transformation Distributions Sampling Estimation Prediction Fluctuations are the Random events in the Statistical Experiment. Noise is the Outcome of the Statistical Experiment.

5. 5 Thermal Noise & Shot Noise RTS in time domain Low-frequency Noise in frequency domain (Lorentzian Noise) (M. J. Chen, et al., Journal of Applied Physics, p. 648, 2001) Intrinsic Noise

6. 6 Thermal Noise Random walk in bulk of conductor (away from the barrier) – Brownian Motion – (Einstein’s 1906 paper) – Einstein relationship – Diffusivity – Drift and Diffusion – Return of the thermal equilibrium Shot Noise Random injection thermally over the peak of the barrier, or tunneling through the barrier, according to Schottky Low-frequency Noise (RTS) due to the imperfections (defects, traps) of the surface near the conductor, in the EE area. Conventional Classifications:

7. 7 IEE5668 Noise and Fluctuations 雜訊與擾動 Course Format: Three hours of lecture a week Prerequisites: (1) Mathematics and (2) Physics Textbook: (Royal Aircraft Establishment) M. J. Buckingham, Noise in Electronic Devices and Systems, Ellis Horwood Limited, 1983. References: 1. Ming-Jer Chen, Lecture Notes, 2015. 2. Ming-Jer Chen and Ming-Pei Lu, Electrically Probing Atomic-Sized Oxide Traps, Encyclopedia of Nanoscience and Nanotechnology, American Scientific Publishers, vol. 13, pp. 243-261, 2011. (ISBN: 1-58883-162-0) 3. Good articles from high-impact journals: Nature, Science, Nano Letters, Physical Review Letters, Solid State Communication, etc.

8. 8 Content 1. Introduction - Purposes of the course - Projections from the course 2. Theoretical Framework and Experimental Setups - Random Events and Random Walk - Probability Distributions (steady versus unsteady) - Mathematics of Stochastic Processes Autocorrelation Function and Power Spectral Density Wiener-Khintchine Theorem Equivalent Circuitry and Transformation Measurement Issues 3. Random Telegraph Signals (specific RTS) in a MOS System - Origin of a Single Oxide or Interface Trap - Single Electron Capture and Emission Kinetics - Energy of the System - Coulomb Energy 4. 1/f Noise as in a MOS System 5. Thermal Noise in any Electronics Devices Microscopic Theory of Thermal Noise: Einstein’s Approach Macroscopic Theory of Thermal Noise: Nyquist’s Approach 6. Shot Noise in any Electronics Devices - Random Number of Carriers via Thermionic Injection - Random Number of Carriers via Field Injection (Tunneling) 7. Generation-Recombination (G-R) Noise (Trap related; General RTS) 8. Other Key Issues RTS, BTI, and 1/f Noise in NanoFETs (percolation, variability) RTS and Shot noise in Quantum Dot Devices Noise and Fluctuations in Nanowires Noise in Bioelectronics

9. 9 New Perspective in 2015 class: 1.Focus on RTS 2.Thermal Noise derived from RTS 3.Shot Noise derived from RTS 4.BTI derived from RTS - the same physical origin 5.Yield calculation (limited by thermal noise, for example) in a Giga-scale chip 6.Stochastic resonance in a nerve