1. Update on Physical Parameters that influence Timing Jean-Francois Genat LPNHE Paris LAPPD Electronics & Integration Review July 9th 2012, Chicago

2. Micro-Channel Plates Timing Resolution Timing resolutions (Transit Time Spread) in the 10-100 ps range - MCP parameters impacting transit time: Rise-time First strike, Pore Tilt angle, Pore size (diameter, length) Bias voltages (gaps transit times) - MCP parameters impacting noise and rise-time Photo-cathode noise (mainly impulse noise) Secondary emitter noise Gain fluctuations - MCP environment Anode T-line bandwidth Magnetic field - Electronics parameters Analog bandwidth Sample rate Electronics gain (if any) Electronics noise Signal integrity (system noise) Jean-Francois Genat, LAPPD Electronics & Integration Godparents Review, Chicago, July 9 th 2012

3. MCP steady noise (measured with a digital oscilloscope) Baseline noise: 700  V rms Single Photo-Electron Is 8 mV S/N ~10 Jean-Francois Genat, LAPPD Electronics & Integration Godparents Review, Chicago, July 9 th 2012

4. Timing spreads estimation (rising edge sampling) Main contributors Detector: Transit Time Noise detector Rise time Gain Waveform Sampling Electronics: Noise elec Sample rate Analog bandwidth Jean-Francois Genat, LAPPD Electronics & Integration Godparents Review, Chicago, July 9 th 2012 With SN=10, ts=100ps (10GS/s), abw = 700 MHz  = 22ps

5. MCP Timing Resolution (measured vs predicted) Predicted using rising edge sampling is 22ps at 10GS/s and 700 MHz analog bandwidth (see above) Measured on a 8’’ x 8’’ by Andrey Elagin, Razib Obaid, Sasha Vostrikov, and Matt Wetstein early July: https://psec.uchicago.edu/blogs/lappd/wp-content/uploads/2012/06/7-3-12.pdf Measured 38ps rms for most of the pulses Note: Some pulses (with broad rising edges and more signal on the neighboring strips) have an rms around 100 picoseconds Suspect signal to noise... Or other conditions (sampling rate, analog bandwidth) Jean-Francois Genat, LAPPD Electronics & Integration Godparents Review, Chicago, July 9 th 2012

6. Conclusion - Some discrepancy between calculations and measurements 38 ps measured vs 22 ps predicted, but results are on the same order as commercial 2’’ x 2’’ MCPs on a 16 times larger area ! Check floor level Thanks… Jean-Francois Genat, LAPPD Electronics & Integration Godparents Review, Chicago, July 9 th 2012

7. Backup slides Jean-Francois Genat, LAPPD Electronics & Integration Godparents Review, Chicago, July 9 th 2012

8. MCPs signal development Short Transit Time: -Thin photo-cathode gap, - High electric field - Thin MCP: small pore size (L/d = 40) < 5  m, l < 200  m - First strike: cathode on MCP, funnel shaped pore entance Fast pulse: - Thin anode gap, - High electric field 10 -5 mm Hg vacuum rigidity is 1kV/100  m MCP signal rising edge: qE = ma l = 1mm, E=100V/mm, tr=250ps Jean-Francois Genat, LAPPD Electronic Review, Chicago, May 20 th 2011

9. MCP Device Simulations by Lionel De Sa Photo-cathode gap 9 Full device simulations: Valentin Ivanov Zeke Insepov (20-30ps total measured) Jean-Francois Genat, LAPPD Electronic Review, Chicago, May 20 th 2011 No repulsion between electrons Factor of 2 = 10ps

10. TTS contributions - First gap - First amplification stage - Second amplification stage - Anode gap Jean-Francois Genat, LAPPD Electronic Review, Chicago, May 20 th 2011