1. R&D Plan in FY2003 Vertex Detector Subgroup Y. Sugimoto 11 Apr. 2003

2. Activity in FY2002 Development of CPCI ADC Development of CPCI ADC Design has been completed Design has been completed Modules will delivered in this summer Modules will delivered in this summer Radiation Damage Study Radiation Damage Study High energy (150MeV) electron irradiation at Tohoku Univ. High energy (150MeV) electron irradiation at Tohoku Univ. Sr-90 irradiation at KEK Sr-90 irradiation at KEK 6x10 10 /cm 2 electrons irradiated in both cases 6x10 10 /cm 2 electrons irradiated in both cases 150MeV electrons have x3 (not x10) larger effect 150MeV electrons have x3 (not x10) larger effect

3. Activity Plan in FY2003 CCD Radiation Damage Study CCD Radiation Damage Study Development of CPCI ADC Development of CPCI ADC Study of Thin CCD Wafer Study of Thin CCD Wafer Study of Diffusion in Epitaxial Layer Study of Diffusion in Epitaxial Layer Simulation Simulation

4. CCD Radiation Damage Study Irradiation of HE electrons Irradiation of HE electrons 1 shift x 4 machine times ( up to 10 12 /cm 2 ) 1 shift x 4 machine times ( up to 10 12 /cm 2 ) More accurate and reliable dose monitor More accurate and reliable dose monitor Irradiation of Sr-90  Irradiation of Sr-90  Same dose as HE electron irradiation Same dose as HE electron irradiation Reliable comparison with HE irradiation Reliable comparison with HE irradiation

5. CCD Radiation Damage Study (Cont.) Study of characteristics of irradiated CCDs Study of characteristics of irradiated CCDs I d vs. Temp I d vs. Temp Flat-band Voltage Shift Flat-band Voltage Shift CTI vs. Temp CTI vs. Temp CTI vs. Readout frequency CTI vs. Readout frequency CTI vs. Fat-zero charge CTI vs. Fat-zero charge CTI vs. clock pulse width/height CTI vs. clock pulse width/height  x vs. dose  x vs. dose E-dependence of items listed above E-dependence of items listed above Annealing/anti-annealing Annealing/anti-annealing

6. Development of CPCI ADC Get CPCI ADC Modules from company Get CPCI ADC Modules from company Planned in August Planned in August CCD Timing Circuit CCD Timing Circuit Use FPGA Use FPGA Generate drive pulses for CCD (TTL) and clock pulses for CPCI ADC (LVDS) Generate drive pulses for CCD (TTL) and clock pulses for CPCI ADC (LVDS) Construction of CPCI DAQ system Construction of CPCI DAQ system

7. CPCI DAQ System Example Example Compact PCI Crate (6U) ADC CPU Card Gbit Hub Host PC with Gbit NIC

8. Study of Thin CCD Wafer Motivation Motivation CCDs have ~20  m thick sensitive region CCDs have ~20  m thick sensitive region Should be thinned to ~20  m if mechanical strength is ensured Should be thinned to ~20  m if mechanical strength is ensured Sample Wafers Sample Wafers Picture frame type ---- No good Picture frame type ---- No good Honeycomb/SHOJI type will be studied Honeycomb/SHOJI type will be studied Strength calculation with ANSIS Strength calculation with ANSIS If OK, make sample wafers If OK, make sample wafers

9. Sample Wafer Honeycomb Type Honeycomb Type Shouji Type Average thickness = 76  m = 76  m = 100  m (includeing = 100  m (includeing edge) edge)

10. Study of Diffusion in Epi-Layer Diffusion of electrons in Epi. Layer Diffusion of electrons in Epi. Layer Key of excellent spatial resolution for CCD & CMOS pixel sensors Key of excellent spatial resolution for CCD & CMOS pixel sensors Takes time to diffuse Takes time to diffuse d = sqrt(Dt) d = sqrt(Dt) d ~ 6  m @ t=10ns d ~ 6  m @ t=10ns  May not work at TESLA Measure charge spread as a function of time Measure charge spread as a function of time

11. Simulation Simulation studies concerning Vertex det. Simulation studies concerning Vertex det. Background study using Full Simulator (JIM, JUPITER) - - Sugimoto, Aso Background study using Full Simulator (JIM, JUPITER) - - Sugimoto, Aso Physics study using Quick Simulator -- G.B. Yu Physics study using Quick Simulator -- G.B. Yu Physics and Detector study using Full Simulator Physics and Detector study using Full Simulator

12. Future dream in FY2004~ Custom made CCDs with Custom made CCDs with > 20MHz readout speed > 20MHz readout speed Multiple readout nodes Multiple readout nodes Notch structure Notch structure Charge injection capability Charge injection capability Readout by ASIC with multi-channel CDSs, Amplifiers, ADCs, and a Multiplexer Readout by ASIC with multi-channel CDSs, Amplifiers, ADCs, and a Multiplexer Things to do in 2003 Things to do in 2003 Technical design of the prototype CCD ( with HPK) Technical design of the prototype CCD ( with HPK) Try to get \ -- Japan-US, KAKENHI, etc. Try to get \ -- Japan-US, KAKENHI, etc.