Download presentation
Presentation is loading. Please wait.
Published byGiles Griffin Modified over 9 years ago
2
Basic model p n +-
3
Characteristics of a Schottky diode and a PN junction diode
4
Basic assumptions pn
5
Basic model notation p n
7
Evolution of the density perturbations Drift due to the electric field Diffusion of the perturbation Generation of additional perturbation Collision lifetime Steady-state Neglect drift and generation
9
Currents – sum of hole and electron currents
11
Reverse saturation current These are minority carrier diffusion currents only.
12
These are minority carrier diffusion currents only. p n Majority carriers are defined as the following. The existence of a diffusion current implies an inhomogeneous density profile resulting in a nonzero electric field.
13
Majority carriers p n Majority carrier electron current Majority carrier hole current I Minority carrier diffusion current Minority carrier diffusion current Holes are injected from the p region Electrons are injected from the n region
14
Currents – sum of hole and electron currents Reverse saturation current
15
Currents – sum of hole and electron currents
17
Europeans are very interested in the American election. This is a float in a parade in Germany.
19
Simple three-dimensional unit cell
Similar presentations
© 2025 SlidePlayer.com. Inc.
All rights reserved.