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1 ME 381R Lecture 13-14 Semiconductor Devices and Thermal Issues Dr. Li Shi Department of Mechanical Engineering The University of Texas at Austin Austin, TX 78712 www.me.utexas.edu/~lishi lishi@mail.utexas.edu Reading: 1-7-1 & Ch. 7 in Tien et al.
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2 p-n Junction w/o Bias Depletion Region
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3 Biased p-n Junction
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4 Metal-Oxide-Semiconductor (MOS) Capacitor : Electron Affinity Work Function Energy Band Diagram before making contact n-type
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5 MOS Capacitor W/O Bias (Special Case: M = S ) Energy Band Diagram after making contact
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6 Accumulation and Depletion of Majority Carriers VGVG ViVi eV G VSVS Block Charge Diagram Very thin
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7 Inversion Layer: C majority carrier >C minority carrier
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8 Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
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9 Ideal MOSFET V G >0
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10 Pinch-Off & IV
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11 Thermal Circuit Particle transport theory Fourier ’ s law of heat conduction
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12 Joule Heating in High-Field Devices Localized heat generation near the pinch-off point
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13 X-Y-Z Actuator Thermometry of Nanoelectronics Sample Temperature Sensor Laser Atomic Force Microscope (AFM) + Thermal Probe Cantilever Deflection Sensing Thermal X T Topographic X Z Scanning Thermal Microscope:
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14 Microfabricated Probes Pt-Cr Junction Shi, Kwon, Miner, Majumdar, J. MicroElectroMechanical Sys., 10, p. 370 (2001) 10 m Pt Line Cr Line Tip Laser Reflector SiN x Cantilever
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15 Self Heating Effect on I-V
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16 Optical Phonon Emission at High Field
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17 Heat Transfer Path
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18 Governing Equations for Electro-Thermal Simulation of Devices
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19 Example
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20 Computation Scheme
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21 Results
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22 Electric Field
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23 Electron Temperature
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24 Phonon Temperature
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