1. By Squadron Leader Zahid Mir CS&IT Department, Superior University PHY-BE -04 PN Junction

2. PN Junction When a piece of intrinsic silicon is doped so that one part is n-type and the other part is p-type then a pn junction is formed at the boundary between the two regions. PN junction is fundamental to operation of diodes, transistors and other solid-state devices.

3. Charge Carriers The p-region has many holes (majority carriers) and only few thermally generated free electrons (minority carriers). The n-region has many free electrons (majority carriers) and only few thermally generated holes (minority carriers).

4. Depletion Region At the formation of junction:- – Greater concentration of holes in p-region than in n- region (where they exist as minority carriers). – Greater concentration of electrons in the n-region than in p-region (where they exist as minority carriers). – This concentration differences establishes density gradient across the junction resulting in carrier diffusion. – Holes diffuses from p to n-region and electron from n to p-region and terminate their existence by recombination.

6. Depletion Region Diffusion of free electrons from the n-region across the junction creates a layer of positive charges (pentavalent ions) near the junction. Wit the movement of electrons across the junction, p- region loses holes (as the electrons and holes combine). This creates a layer of negative charges (trivalent ions) near the junction. These two layers of positive and negative charges form the depletion region. The term depletion refers to the fact that the region near the pn-junction is depleted of charge carriers (electrons and holes) due to diffusion across the junction.

7. Saturation of Depletion Region With the movement of free electrons across the pn- junction, the depletion region expanded to a point where equilibrium is established and there is no further diffusion of electrons across the junction. This state is called the saturation of depletion layer. Reason – As electrons continue to diffuse across the junction, more and more positive and negative charges are created near the junction as the depletion region is formed. A point is reached where the total negative charge in the depletion region repels any further diffusion of electrons into the p region and the diffusion stops..

8. Potential Barrier In depletion region there are positive and negative ions on opposite sides of the pn-junction. The forces between the opposite charges form an electric field. This electric field is the barrier to the free electrons in the n region, and energy must be expended to move an electron through the electric field. Potential difference of the electric field across the depletion region is the amount of voltage required to move the electrons through the electric field. This potential difference is called the barrier potential. The barrier potential of a pn-junction depends on various factors like: – Type of semiconductor material. – The amount of doping. – Temperature. For silicon,the value of barrier potential is 0.7V and for germanium it is 0.3V at 25 o C.

9. Energy Diagram of PN-Junction At the formation of the junction, the valance & conduction bands in the p-type material are slightly higher than the valance & conduction bands in the n-type material. Reason – This is due to the fact that core attraction for valance electrons (+3) in a trivalent atom is less than the core attraction for valance electrons (+5) in a pentavalent atom. – Hence trivalent valance electrons are in slightly higher orbit and hence at higher energy level.

10. Energy Diagram of PN-Junction There is a significant amount of overlapping between respective bands of the two region. Free electrons in the n-region that occupy the upper part of the conduction band in terms of their energy can easily diffuse across the junction and temporarily become free electrons in the lower part of the p-region conduction band. After crossing the junction, the electrons quickly lose energy and fall into the holes in the p-region valance band.

11. Energy Diagram of PN-Junction As the diffusion continues, the depletion region begins to form and the energy level of the n- region conduction band decreases Reason – This is due to the loss of higher- energy electrons that have diffused across the junction to the p-region. Soon there are no free electrons left in the n-region conduction band with enough energy to get across the junction to the p-region conduction band.

12. Energy Diagram of PN-Junction This is the equilibrium and the depletion region is complete because diffusion has ceased. There is an energy gradiant across the depletion region which acts as an “energy hill” that an n region electron must climb to get to the p-region.

13. References “A Textbook of Electrical Engineering” by B L Theraja “Electronic Devices” by Thomas L. Floyd(7 th Edition)