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Tonto B. 22 Full field – 3 dies in a field Structure repeated Die #2 Structure repeated Die #3 Die #1 (0,0) (19340,6420) 6420um.

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Presentation on theme: "Tonto B. 22 Full field – 3 dies in a field Structure repeated Die #2 Structure repeated Die #3 Die #1 (0,0) (19340,6420) 6420um."— Presentation transcript:

1 Tonto B

2 22 Full field – 3 dies in a field Structure repeated Die #2 Structure repeated Die #3 Die #1 (0,0) (19340,6420) 6420um

3 33 Single die 1000um 3700um Shadow mask for the R/W material. Dimension 1mmx1mm Shadow mask for the top electrode material. Dimension 2.8mmx3.7 mm 2800um 500um

4 44 Electrical modules in the die n We typically use mod 009 or mod019 (blue circle) to access the 0.5umx0.5 um device. 123 456 789 131211 161514 191817 10

5 55 Different resistors available in the testchip 1234567891011121314151617 18192021222324 200 K  400 K  100 K  50 K  25 K  1 K  TiN Bottom Electrode Top Electrode Metal Oxide Active Devices Pads 1-18 Pads 19-24

6 66 Description of mod009 and mod019 n Typically the bottom electrode is either pads 2 or 3 or 4 and the top electrode is any one from pad 19 to 24 depending on what current limit you need.

7 Tonto C

8 88 Full field 0.5um BC0.35um BC 0.13um BC 0.15um BC Structure repeated (0,0) (15320um,6080um) Resistor Top electrode contact 5080um 3000um 650.4um 648.8um

9 99 Test structure – 1/2 Zoom in next slide Top electrode contact

10 10 Test structure – 2/2 Single isolated BC structure.

11 11 Tonto C shadow mask 400um 1000um 250um 1800um 400um 2000um Shadow mask for the R/W material. Dimension 1mmx1mm Shadow mask for the top electrode material. Dimension 1mmx2mm

12 12 Test structure schematic 112 7181617192021 35 K  25 K  43 K  400 K  650 K  Bottom wiring Top Electrode Metal Oxide Active Device Pads 7,16,17,18,19,20,21 Pads 1 or 12 Assumed X1 sheet rho=1.5ohms/sq


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