1. Scaling I Mohammad Sharifkhani

2. Reading Text book II (pp. 123)

3. Acknowledgement Some of the slides/figures in this series is brought from other people’s slides in various conferences. So I would like to appreciate them all.

4. What is Scaling ? Smaller devices  More devices on a given area

5. Recent devices

6. Are they really MOS?

7. Challenges 1. Complexity 2. Cost of integrated circuits is increasing 3. Power 4. Robustness issues 5. The interconnect problem

8. Transistor count The cost of T. drops at the expense of reliability of the chip and testing cost

9. Frequency Multi-core technologies is going to replace the frequency scaling or make it go slower

10. Power Power consumption is the limiting factor in high performance designs

11. Power issue in scaled technologies Let’s assume that these trends continue— that is, frequency doubles, supply voltage scales down 30%, active capacitance grows 30% to 35%, and die size grows 25%. Now we can speculate on power dissipation and supply currents.

12. Power cont’ Supply voltage scaling is mandatory!

13. Power density

14. Supply Current Issues IR drop due to high current  Supply rails on the chip L(di/dt)  creates noise on the supplies –Especially when VDD low-voltage is used

15. Hottest chips in ISSCC

16. Die Size The size of the die affects –Yield $ –Testing $ –Reliability ~$

17. Lithography issues The wavelength of the beam that is used to project an image to a surface determines the accuracy of lines on the image –Consider painting a 1cm line with 3cm brush –EUV: absorbed by matter  vaccume –Lower throughput

18. Lithography Cost Cost increase due to complexities such as –Lower wavelength laser –Exposure system (mirrors, etc.) –Correcting masks (phase shifting, etc.) The cost drops after a few years

19. Fab cost Does it make sense to have a fab or better go fabless?

20. Comparison 0.25um vs. 45nm

21. Process Variation Remember tolerance in Electronics I? Feature size↓  Accuracy↓ (random variation↑) –Mean vs. Std. Sources: –Lithography –Feature size, oxide thickness variations –Random dopant fluctuations –Temperature gradients, supply grid Affect: –Yield Speed, power –Leakage power –Reliability –Testing

22. Interconnect Source: Bohr, Mark T., “Interconnect Scaling - The Real Limiter to High Performance ULSI,” Proceedings of the 1995 IEEE International Electron Devices Meeting, pp 241-242.) Add process variation 

23. Extra: LOCOS vs STI