1. Aluminum-induced in situ crystallization of HWCVD a-Si:H films
指導教授：管 鴻 教授
學 生：郭豐榮

2. Outline INTRODUCTION EXPERIMENTAL RESULTS AND DISCUSSION CONCLUSION
REFERENCES

3. INTRODUCTION
Thin-film polycrystalline silicon is nowadays drawing a lot of interest due to its potential use in electronic devices.
we show for the first time the AIC of HWCVD a-Si:H films without the subsequent annealing step.Thus, one can avoid the post-deposition annealing step by depositing Al at an appropriate temperature.

4. EXPERIMENTAL glass a-Si:H Al Al a-Si:H annealing Raman XRD
By HWCVD at a substrate temperature of 300 °C, with silane flow of 10 sccm and pressure of 70 mTorr. Distance between filament and substrate was 5 cm and filament temperature used was 1700 °C and deposition rate was 1 nm/s.
(a)
(b)
a-Si:H Al Al
a-Si:H
annealing
Raman
XRD

5. RESULTS AND DISCUSSION
Raman spectra for samples with different Al thicknesses of (a) 10 nm,
(b) 40 nm, and (c) 60 nm and constant a-Si:H (600 nm) thickness after annealing
at 400 °C for 4 h

6. RESULTS AND DISCUSSION
XRD plot of the sample with Al (60 nm) deposited on a-Si:H (600 nm)
after annealing at 400 °C for 4 h

7. RESULTS AND DISCUSSION
Raman spectra for (a) glass/a-Si:H (350 nm) and (b) glass/a-Si:H
(450 nm) on which Al (50 nm) is deposited at 300 °C.

8. RESULTS AND DISCUSSION
XRD plot for glass/a-Si:H (450 nm) on which Al (50 nm) is deposited at
300 °C

9. CONCLUSION
Through AIC of HWCVD a-Si:H films, it is possible to achieve higher grain sizes in the poly-Si film suitable for electronic devices.
By depositing the Al at moderate temperature of about 300 °C, it is possible to avoid ex situ annealing step and also reduce the processing temperature for AIC.

10. REFERENCES
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