Presentation is loading. Please wait.

Presentation is loading. Please wait.

Lehman Review 11-13 April 2000 D. Bortoletto 1 Forward Pixel Sensors Daniela Bortoletto Purdue University US CMS DOE/NSF Review April 12,2000 Progress.

Published byCaitlin Riley Modified over 9 years ago

Similar presentations

Presentation on theme: "Lehman Review 11-13 April 2000 D. Bortoletto 1 Forward Pixel Sensors Daniela Bortoletto Purdue University US CMS DOE/NSF Review April 12,2000 Progress."— Presentation transcript:

1 Lehman Review 11-13 April 2000 D. Bortoletto 1 Forward Pixel Sensors Daniela Bortoletto Purdue University US CMS DOE/NSF Review April 12,2000 Progress First engineering run with vendors R&D with BNL Plans 2000-2001

2 Lehman Review 11-13 April 2000 D. Bortoletto 2 Forward Pixel Sensors Submissions with two vendors SINTEF(With BteV): 17 wafers delivered 3/2000 CSEM (with BTeV): Layout completed 11/1999 CSEM (Purdue-Zurich-PSI): 3 wafers delivered 2/2000 Development of testing plan Probing studies, irradiation and beam tests Verify design choices and choose substrate: Oxygen enriched Orientation (111) versus (100) Possible re-submission (end of 2000) Final order in 2001 R@D at JHU- BNL, Results New Guard Ring Design and Irradiation with p and n

3 Lehman Review 11-13 April 2000 D. Bortoletto 3 LHC environment SIMULATION Radiation environment dominated by pp secondaries L=5  10 5 pb -1   6  10 14 cm -2 in six years of operation at r=7 cm

4 Lehman Review 11-13 April 2000 D. Bortoletto 4 SINTEF/CSEM submission Wafer layout (Purdue-Fermilab-JHU) Joint submission with BTeV. At least 15 wafers n + /n with p-stops isolation technique on the readout side. 3 wafers will be oxygenated Thickness: 300  m, TTV <8  m Resistivity: 1.0-2.5 k  cm Breakdown voltage: >300 V Leakage current @ 1.5 Vdep: <50 nA/cm 2 Polishing: double sided Passivation: double sided

5 Lehman Review 11-13 April 2000 D. Bortoletto 5 history Submission history Nov 16- 98 SINTEF visit FNAL Nov 20- 98 Eurysis Mesures visit FNAL March 1-99 Bids are sent out: Hamamatsu Sintef CSEM CiS institut fur Microsensorik Eurysis Mesures March 22-99 replay from CSEM and SINTEF

6 Lehman Review 11-13 April 2000 D. Bortoletto 6 history Submission history CSEM: March 25, 1999 receive quote for delivery in 20 weeks with no UBM(50.1K) April 28, 1999: PO sent to CSEM Stock availability 300  m,, 1-2k  March 13, 2000: still negotiating final design Sintef: March 25, 1999 receive quote for delivery in 19 weeks with no UBM (82 K) April 28, 1999: PO sent to SINTEF Stock availability 270  m,, 1-2k  October 12, 1999: Approve design March 09, 2000: received 17 Wafers, 3 wafers are oxygenated.

7 Lehman Review 11-13 April 2000 D. Bortoletto 7 Sintef/CSEM Submission Goals: Test 150  m x 150  m roc 22x30 pixels arrays Bating on both directions 52x53 pixels arrays 1 2x1 ROCs 1 4x2 ROCs Optimize processing Double open ring p-stop Guard ring design Bias structure for probing Study interpixel capacitance Behavior of unbonded pixel

8 Lehman Review 11-13 April 2000 D. Bortoletto 8 Submission Test structures allow to understand both bulk and surface damage: Interpixel resistance structures Interpixel capacitance structures Multiguards diodes (IV & CV) Single guard diodes (IV & CV) MOS capacitors (CV) Gated diodes (IV) Transistors (Subthreshold) Fan Out pixel arrays (Strip ROCs) Interpixel resistance Interpixel capacitance

9 Lehman Review 11-13 April 2000 D. Bortoletto 9 Submission Pixel arrays Example 22  34 Reference marks for alignment. Unique ID Scribe line Backside metal grid Redundant bonding/probing pads

10 Lehman Review 11-13 April 2000 D. Bortoletto 10 P-stop design Critical choice: Double open ring Pstop: New design Keeps unbonded channels grounded Allows testing before bonding. Reduces inter-pixel capacitance Minimizes Breakdown P-spray (Atlas)

11 Lehman Review 11-13 April 2000 D. Bortoletto 11 Baseline design 78  m n-implants surrounded by 2 p-stops rings with openings. Resistive path  O(100K  ). Bump Pad  13  m shifted by 25  m for double column layout

12 Lehman Review 11-13 April 2000 D. Bortoletto 12 Guard ring design Requirements Breakdown voltage > 300V Read-out side grounded Voltage drop on guards on the backside Implementation already tested JHU design CMS Si microstrips (tested with 2 vendors) l

13 Lehman Review 11-13 April 2000 D. Bortoletto 13 Pixel testing plans Evaluation of the Prototype sensors Probing Irradiation Beam tests Production quality control vendors will control conformance to specification spot check for production stability Readiness of the test centers. Fermilab JHU Purdue

14 Lehman Review 11-13 April 2000 D. Bortoletto 14 Prototype sensors Probing Evaluate guard ring design IV curves to measure breakdown voltage Evaluate p-stop design compare IV curves of diodes and pixel devices measure IV curves on different pixel to verify uniform biasing Measure V dep with CV curves before irradiation. After irradiation, measure V dep by using Transient Charge Technique at JHU or signal collection with a pulsed laser at Purdue.

15 Lehman Review 11-13 April 2000 D. Bortoletto 15 Purdue-PSI-Zurich wafer Preliminary measurements of diodes and pixels

16 Lehman Review 11-13 April 2000 D. Bortoletto 16 Measurements setup

17 Lehman Review 11-13 April 2000 D. Bortoletto 17 Preliminary results - CSEM Diodes IV measurements: V breakdown >1000V I/cm 2  68 nA/cm 2 CV measurements: V depletion =155 V

18 Lehman Review 11-13 April 2000 D. Bortoletto 18 Preliminary results - CSEM Pixel sensors IV measurements: V breakdown  300V I/cm 2  30nA/cm 2 at 1.5 V dep IV measurements: V breakdown  500V I/cm 2  36 nA/cm 2 at 1.5 V dep #12 #18

19 Lehman Review 11-13 April 2000 D. Bortoletto 19 Sintef CMS-BteV wafer

20 Lehman Review 11-13 April 2000 D. Bortoletto 20 Preliminary results- Sintef Pixel sensors IV measurements: V breakdown  450V I/cm 2  6 nA/cm 2 at 1.5 V dep IV measurements: V breakdown  300V I/cm 2  6 nA/cm 2 at 1.5 V dep #12

21 Lehman Review 11-13 April 2000 D. Bortoletto 21 Preliminary results Leakage current meets specification on 2/3 wafers 50nA/cm 2 100nA/cm 2 Sintef CSEM

22 Lehman Review 11-13 April 2000 D. Bortoletto 22 Preliminary results Excellent guard ring design allows diode operation >1000V Pixel breakdown between 300-700 V according to the design. Further studies are needed to optimize p- stop design.

23 Lehman Review 11-13 April 2000 D. Bortoletto 23 Preliminary results Depletion voltage Breakdown voltage Higher for pixel fully covered with metal Breakdown voltage Depletion voltage Pixel sensors

24 Lehman Review 11-13 April 2000 D. Bortoletto 24 Probing Prototype Sensors Double sided probing Design of a frame for double sided probing (K.Arndt, Purdue)

25 Lehman Review 11-13 April 2000 D. Bortoletto 25 Prototype sensors Irradiation Established record (see JHU results) Irradiate prototype sensors and diodes up to 1, 3, 6 and 10  10 14 Proton irradiation at Davis Neutron irradiation at Lowell Irradiation of bump bonded sensors at CERN Beam tests CERN Summer 2000

26 Lehman Review 11-13 April 2000 D. Bortoletto 26 Production sensors The test centers will: register sensors in data base perform optical inspection cross check quality tag defects check production stability Leakage current measurement at fixed bias on 5% of wafer

27 Lehman Review 11-13 April 2000 D. Bortoletto 27 Readiness of the test centers Test centers: JHU: manual probe station Purdue: semiautomatic probe station Fermilab: several probe stations Conformance: Stability of measurement was checked in all locations. Good agreement was obtained on IV and CV on test diode from BNL. Personnel: Purdue: D. Bortoletto, G. Bolla, 2 graduate students and undergraduates JHU: Chih Yung Chien and Hyosung Cho Fermilab: Simon Kwan

28 Lehman Review 11-13 April 2000 D. Bortoletto 28 R&D Sensors, JHU - BNL New guard ring design Guard ring on the n + side replaced by a wide n + implant Irradiation sources Proton (24GeV) up to 1  10 15 cm -2 at PS Neutron (1MeV equivalent) up to 1  10 15 cm -2 at Univ. of Massachusetts, Lowell

29 Lehman Review 11-13 April 2000 D. Bortoletto 29 V Distribution over Guard Rings Non-irradiated Oxygen enriched detector Neutron-irradiated Oxygen enriched detector

30 Lehman Review 11-13 April 2000 D. Bortoletto 30 Full Depletion V vs. Fluence Neutron irradiation Proton irradiation

31 Lehman Review 11-13 April 2000 D. Bortoletto 31 Goal FY2001 Prototype sensors are available Optimize sensor design Finalize testing and evaluation plan Second submission by the end of 2000 Select final sensor design Order production sensors in March 2001

Download ppt "Lehman Review 11-13 April 2000 D. Bortoletto 1 Forward Pixel Sensors Daniela Bortoletto Purdue University US CMS DOE/NSF Review April 12,2000 Progress."

Similar presentations

Trapping in silicon detectors G. Kramberger Jožef Stefan Institute, Ljubljana Slovenia G. Kramberger, Trapping in silicon detectors, Aug. 23-24, 2006,

Trapping in silicon detectors G. Kramberger Jožef Stefan Institute, Ljubljana Slovenia G. Kramberger, Trapping in silicon detectors, Aug , 2006,
Silicon Preshower for the CMS: BARC Participation

Silicon Preshower for the CMS: BARC Participation
January 22, 20031 Run IIB Silicon workshop Purdue University Bortoletto Daniela, Bolla Gino, Canepa Anadi Hamamatsu testing I-V characteristics up to 1000V.

January 22, Run IIB Silicon workshop Purdue University Bortoletto Daniela, Bolla Gino, Canepa Anadi Hamamatsu testing I-V characteristics up to 1000V.
1 Status of the CMS Pixel project Lorenzo Uplegger RD07 Florence 28 June 2007.

1 Status of the CMS Pixel project Lorenzo Uplegger RD07 Florence 28 June 2007.
Irradiation at IUCF We irradiated 5 chips from Sintef wafer 9 (7,39,42,44,46) at Indiana University Cyclotron Facility on 30th November. Pixel 7,44 and.

Irradiation at IUCF We irradiated 5 chips from Sintef wafer 9 (7,39,42,44,46) at Indiana University Cyclotron Facility on 30th November. Pixel 7,44 and.
Pixel Sensors for ATLAS Sally Seidel University of New Mexico Pixel ‘98 8 May 1998.

Pixel Sensors for ATLAS Sally Seidel University of New Mexico Pixel ‘98 8 May 1998.
Test of Pixel Sensors for the CMS experiment Amitava Roy Purdue University.

Test of Pixel Sensors for the CMS experiment Amitava Roy Purdue University.
4/28/01APS1 Test of Forward Pixel Sensors for the CMS experiment Amitava Roy Daniela Bortoletto Gino Bolla Carsten Rott Purdue University.

4/28/01APS1 Test of Forward Pixel Sensors for the CMS experiment Amitava Roy Daniela Bortoletto Gino Bolla Carsten Rott Purdue University.
First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki.

First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki.
SINTEF Wafers We studied two wafers. Wafer #24 and one oxygenated wafer.

SINTEF Wafers We studied two wafers. Wafer #24 and one oxygenated wafer.
November 3-8, 2002D. Bortoletto - Vertex 20021 Silicon Sensors for CMS Daniela Bortoletto Purdue University Grad students: Kim Giolo, Amit Roy, Seunghee.

November 3-8, 2002D. Bortoletto - Vertex Silicon Sensors for CMS Daniela Bortoletto Purdue University Grad students: Kim Giolo, Amit Roy, Seunghee.
Sensors for CDF RunIIb silicon upgrade LayerR min (cm)1 MeV eq-n cm -2 02.113.6 *10 13 13.55.7*10 13 25.92.3*10 13 39.11.1*10 13 411.90.7*10 13 514.70.5*10.

Sensors for CDF RunIIb silicon upgrade LayerR min (cm)1 MeV eq-n cm * * * * * *10.
Capacitance of Silicon Pixels Sally Seidel, Grant Gorfine, Martin Hoeferkamp, Veronica Mata-Bruni, and Geno Santistevan University of New Mexico PIXEL.

Capacitance of Silicon Pixels Sally Seidel, Grant Gorfine, Martin Hoeferkamp, Veronica Mata-Bruni, and Geno Santistevan University of New Mexico PIXEL.
20th RD50 Workshop (Bari)1 G. PellegriniInstituto de Microelectrónica de Barcelona G. Pellegrini, C. Fleta, M. Lozano, D. Quirion, Ivan Vila, F. Muñoz.

20th RD50 Workshop (Bari)1 G. PellegriniInstituto de Microelectrónica de Barcelona G. Pellegrini, C. Fleta, M. Lozano, D. Quirion, Ivan Vila, F. Muñoz.
St Malo, 13 th April 2002Václav Vrba, Institute of Physics, AS CR 1 Václav Vrba Institute of Physics, AS CR, Prague Silicon pad sensors for W-Si ECal.

St Malo, 13 th April 2002Václav Vrba, Institute of Physics, AS CR 1 Václav Vrba Institute of Physics, AS CR, Prague Silicon pad sensors for W-Si ECal.
Charge collection studies on heavily diodes from RD50 multiplication run G. Kramberger, V. Cindro, I. Mandić, M. Mikuž Ϯ, M. Milovanović, M. Zavrtanik.

Charge collection studies on heavily diodes from RD50 multiplication run G. Kramberger, V. Cindro, I. Mandić, M. Mikuž Ϯ, M. Milovanović, M. Zavrtanik.
Haga clic para modificar el estilo de texto del patrón Progress on p-type isolation technology M. Lozano, F. Campabadal, C. Fleta, S. Martí *, M. Miñano.

Haga clic para modificar el estilo de texto del patrón Progress on p-type isolation technology M. Lozano, F. Campabadal, C. Fleta, S. Martí *, M. Miñano.
Summary of CMS 3D pixel sensors R&D Enver Alagoz 1 On behalf of CMS 3D collaboration 1 Physics Department, Purdue University, West Lafayette, IN 47907-2036.

Summary of CMS 3D pixel sensors R&D Enver Alagoz 1 On behalf of CMS 3D collaboration 1 Physics Department, Purdue University, West Lafayette, IN
8/22/01Marina Artuso - Pixel Sensor Meeting - Aug 2001 1 Sensor R&D at Syracuse University Marina Artuso Chaouki Boulahouache Brian Gantz Paul Gelling.

8/22/01Marina Artuso - Pixel Sensor Meeting - Aug Sensor R&D at Syracuse University Marina Artuso Chaouki Boulahouache Brian Gantz Paul Gelling.
List of Authors: Maria Rita Coluccia, J. A. Appel, G. Chiodini, D. C. Christian, S. W. Kwan, G. Sellberg with Fermi National Accelerator Laboratory L.

List of Authors: Maria Rita Coluccia, J. A. Appel, G. Chiodini, D. C. Christian, S. W. Kwan, G. Sellberg with Fermi National Accelerator Laboratory L.

Similar presentations

Ads by Google