1. Weekly Group Meeting Report Renjie Chen Supervisor: Shadi A. Dayeh

2. /14 1. Ni-InGaAs Solid-state Reaction Previous Design 2 Bonding Etch InP Etch Back InP InGaAs Ni SiO 2 Si Aperture Frame HfO2HfO2 HfO 2 Remaining Problems HfO 2 InGaAs Poor HRTEM Imaging due to HfO 2 layer Membrane broken during fabrication

3. /143 New Design Si Directly fabricate Fins on top Deposit Ni Spin-coat PMMA Imbedded Copper TEM grids Bond to Carrier wafer With PMMA InP Lap & etch PMMA release

4. /144 Copper TEM Aperture Microscope image before InP etchng

5. /14 2. Neural Probes 5 1. Photolithography process in CINT In nano3 UCSD, the photolithography on sapphire wafer was performed with NR7-1500 photoresist In CINT, there’s no NR7 resist. The resist I used, AZ-5214 for image reverse, doesn’t work well for sapphire (transparent wafer) This morning, Don helped me try the resist 5510 which gives a good resolution, however, it does not still stick to sapphire quite well. I’ll take a look at the data sheet and some literatures to modify the 5510 process.

6. /146 2. Nickel silicide bonding test on Sapphire wafer 300’C 5min + 400’C 10min300’C 5min + 400’C 20min300’C 5min + 400’C 30min

7. /14 Thank you Q&A 7