2. Corial 200RL

3. COSMA Software with:  Edit menu for process recipe edition,  Adjust menu for process optimizing,  Maintenance menus for complete equipment control via internet with VPN (Virtual Private Network). CORS Software for:  Data reprocessing (Measures and data comparison). Equipment Control & Software

4. A Tool Organized in Successive Levels Actions Constructor LotsActions Process Closed-loop Server for GUI COSMA Supervisor Embedded control PU Embedded control function COSMA Controller Process Controller Device Controllers Physical devices Operator Remote GUI PC User Monitoring Monitoring Monitoring

5. Diagram Modes Diagram Modes Stand-byMode Step by step Mode ProductionMode OptimizationMode ConstructorMode Shut down Mode Normal Errors Operator Production Maintenance Constructor

6. A Communicant Tool COSMA Supervisor COSMAGUI Customer Ethernet Network Process Control Unit (1) Process Control Unit (2) Device Control (1) Ethernet Device Control (2) Ethernet WANVPNADSL Fix IP Firewall Dedicated Ethernet network

7. SystemLoad-lock RF Generator Electronic Control TMP Control RIE Reactor HT/BT Power Supplies

8. Pumping System TMP TV Reactor Dry Pump ADP 122 Load-Lock Valve Load-lock Gate valve for quick reactor venting and cleaning

9.  Reactive Ion Etching source designed to operate with a wide working pressure range (10 to 200 mT),  The large cathode size enables batch etching of up to three 3” wafers,  Shuttles for loading and to enable etching of different sizes and numbers of wafers,  Helium assisted heat exchange between cathode, shuttle and wafers with mechanical clamping to maintain sample temperature below 100°C during etching. Reactor Features

10. Loading Cathode Loading tool Shuttle

11. Loading Cathode Shuttle

12. Clamping Cathode Shuttle

13. Cooling Cathode Shuttle Helium

14. Etching Cathode Shuttle Helium PLASMA

15. End of Etching Loading tool Cathode Shuttle

16. Unloading Cathode Shuttle

17. Unloading Shuttle Cathode

18. Pression He en fonction du débit - He Pressure Versus He Flow Rate - 05101520250 0 5 10 15 0 Débit He - He Flow Rate - (sccm) Pression He (Torrs) Pressure - - He Pressure - He Pressure vs He Flow Rate Work Area Shuttle for Ø200 mm Wafer Goal: Ensure wafer cooling Altymid Ring Wafer O’ Ring Base Plate Graphite Plate

19. Development is carried out through Design of Experiments (DOE) Optimisation of Via-hole process:  Etch rate,  Uniformity of etch rate,  Selectivity against resist,  Etch profile. Customer Benefit Customer Benefit Process modelization enables fast matching with customer requirements. Guaranteed Process Results Process Development

20. VIA-HOLE PROCESS (1) Etch Rate versus CH4 and Working Pressure Uniformity of Etch Rate versus CH4 and Pressure

21. VIA-HOLE PROCESS (2) Selectivity against photoresist versus CH4 and Pressure Selectivity against photoresist versus CH4 and RF Power

22. Process Specifications For a Batch of Three 3” Wafers Guaranteed Process Results Etch Rate (*) (µm/min) Uniformity of Etch Rate Selectivity against PR Profile 3 < ±6% > 25 85° NOTE : The specifications in etch rate and uniformity of etch rate are achieved when the via-hole has a uniform size ≥ (50 ±1)µm

23. End of etching can be monitored using a CCD camera with magnification > 120 X and a laser beam diameter ≤ 20  m. The laser spot is located with a precise XY stage on via-hole area. When the gold film is exposed the system detects automatically the change in reflectivity level. Precise Monitoring

24. Photodiode Laser Endpoint Detection Laser beam Photoresist Gold layer Reflected beam When laser reaches the gold, the signal level increases. This signal change enables automatic endpoint detection. Time Signal

25.  Reactive Ion Etching source which produces a uniform plasma in a wide range of working pressure (10 to 200 mT) for fast etching of via- holes in GaAs on up to three  75 mm wafers,  Helium assisted heat exchange to maintain resist integrity,  Various shuttles to optimize each process configuration (wafer sizes, number of wafers, material to etch, etc…),  Laser endpoint with high magnification and small laser spot (25 µm) for precise process monitoring,  Wide process range with capability to adjust the etch profile according to the working pressure. Recap of Corial 200RL Features