1. 1

2. 2 2 Transition to cables Staves Services IP Underside of stave: IBL modules IBL Design

3. Present IBL status: FE-I4 Wafer received : 16 in hands and 20 more available Tests – Very high (green) yield (6 wafer fully tested, yield ~70%). Irradiated with protons – 6, 75 and 200 Mrad. All chips working after irradiation. Analog performance little affected (Noise, Threshold). Those chips tested by: –Single Chip (SC) cards : chip only –Wafer probing, now automated –SC cards with FEI4+ sensor (bump-bonded at IZM) Analog performance is very good: –Low number of bugs and changes for final version, submission of final version planned before summer Test on going with Planar n-on-n (CiS) sensor and 3D (FBK). –Non irradiated and irradiated sensor currently at DESY test beam –3 wafers of 3D sensors from CNM are being bump- bonded at IZM with FE_I4. AWN6TUH: 78% green ~2 cm FE-I4 R/O Chip 27 k Pixels 87 M transistors

4. First results with CiS planar n-on-n sensors DESY Testbeam (Feb 2011) results with CiS n-in-n slim-edge planar sensors – 3200 e- threshold – 99.9 % efficiency Irradiated devices under test at DESY test beam (Apr 2011)

5. First Results with FBK 3D and FE-I4 5 FBK 3D sensor (device 2-5) Threshold 1500 e - sensor -15V Tested with Am241  source Now irradiated, in test at DESY FBK 3D sensor (device 2-4) Threshold 1500 e- sensor -9V DESY Test Beam (April 2011) Hit map with Beam hit mapAm241 source scan in self trigger Am241 peak Ovf bit – noise from white scratches in hit map Trigger scintillator