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294K 77K 116K 296K 110K 77K 215K 296K 125K 77K 296K 110K 77K 272K 111K 77K 294K 296K 79K 171K Individual TransistorRing Oscillator SOS CMOS : Individual.

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Presentation on theme: "294K 77K 116K 296K 110K 77K 215K 296K 125K 77K 296K 110K 77K 272K 111K 77K 294K 296K 79K 171K Individual TransistorRing Oscillator SOS CMOS : Individual."— Presentation transcript:

1 294K 77K 116K 296K 110K 77K 215K 296K 125K 77K 296K 110K 77K 272K 111K 77K 294K 296K 79K 171K Individual TransistorRing Oscillator SOS CMOS : Individual MOSFETs, Ring Oscillators,16:1 Serializer SM&MM Fibers and SM&MM optical connectors Lasers : VCSEL, DFB, FP ConclusionAcknowledgments 0.25 μm Silicon-on-Sapphire (SoS) CMOS Technology Introduction Components Tested Abstract R&D Towards Cryogenic Optical Links Mark Christiansen b, Jeremy Dodd c, Raphael Galea c†, Datao Gong d, Robert Hackenburg a, Suen Hou e, David Lissauer a, Chonghan Liu d††, Tiankuan Liu d, Veljko Radeka f, Pavel Rehak f, John Sondericker d, Ryszard Stroynowski d, Da-Shung Su e, Peter Takacs f, Helio Takai a, Valeri Tcherniatine a, Ping-Kun Teng e, Craig Thorn a, William Willis b, Annie C. Xiang d, Jingbo Ye d, Bo Yu f a Physics Department, Brookhaven National Laboratory, Upton, NY 11973, U.S.A. b Department of Electrical Engineering, Southern Methodist University, Dallas TX 75275, U.S.A. c Department of Physics, Columbia University, New York, NY 10027, U.S.A. d Department of Physics, Southern Methodist University, Dallas TX 75275, U.S.A. e Institute of Physics, Academia Sinica, Nangang 11529, Taipei, Taiwan f Instrumentation Division, Brookhaven National Laboratory, Upton, NY 11973, U.S.A. g National Research Council of Canada, Ottawa, ON, K1A0R6, Canadaliu@mail.physics.smu.edu We present electrical and optical measurement results on critical components from room temperature to 77 K (liquid nitrogen), 4.2 K (liquid helium). We have identified a CMOS technology, passive components and found promising laser diodes for the development of optical links operating inside a liquid argon time projection chamber. Optical Fibers and Connectors NMOS 2.5 μm/0.25 μm/16PMOS 2.5 μm/0.25 μm/16 As temperature decreases Absolute value of threshold voltage (|V T |) increases Transconductance (gm) peaks around 100 K Waveform at 4.2 K The ring oscillator functions from room temperature to 4.2 K. The frequency increases about 50% with the temperature decreasing from 300 K to 4.2 K The waveform at 4.2 K has higher amplitude and faster transient times than those at room temperature. room temperature, 5.2 Gbps77 K, 5.2 Gbps At 77 K the serializer has a wider open eye diagram with faster rise, fall time, smaller jitters and larger amplitude than those at room temperature. Fiber : Single Mode SMF28 Multi Mode InfiniCor SX+ Connectors: Single Mode F1-8005 Zirconia Sleeve Multi Mode F1-8000 Phosphor Bronze Lasers VCSEL 850 nm multi mode DFB 1570 nm single mode FP 1310 nm single mode Ring oscillators, individual MOSFETs, and a 16:1 5 Gbps serializer fabricated in a commercial 0.25 μm Silicon-on-Sapphire (SoS) CMOS technology function throughout the temperature cycling from room temperature to 4.2 K, 15 K, and 77 K respectively. Optical fibers and optical connectors exhibit small attenuation changes and coupling loss changes respectively at 77 K. VCSEL, DFB and FB lasers lase throughout temperature range 300 K - 77 K. The tests carried out demonstrate feasibility of optical links operating inside the Liquid Argon Time Projection Chamber. Serializer 1 Gary Evans from EE at Southern Methodist University, technical assistance Jim Guenter, Khurana Pritha and Bob Biard from Finisar, lasers and theoretical assistance Arthur Mantie and Mark Schuckert from Macomtech, lasers and technical assistance Todd Huffman and Anthony Weidberg from Oxford, technical assistance Francois Vasey and Jan Troska from CERN, technical assistance Tengyun Chen from USTC, lasers and technical assistance V DD = 1.8 V The chip functions well with V DD = 1.8 V. Below this the bit error rate goes above 10 -12 From room temperature to 77K changeMulti modeSingle mode Fiber (dB/m) 0.034 ± 0.004 ± 0.0150.005 ± 0.004 ± 0.002 Connector (dB) 0.139 ± 0.011 ± 0.002-0.284 ± 0.013 ± 0.014 Possible candidates from DFB and FP lasers VCSEL may need more investigations from more vendors Reliability studies are ongoing The light attenuation per meter of fibers and coupling loss of connectors at 77 K are negligible compared to normal optical link power budget of 10 dB. Due to hot carrier effects, chip reliability may be reduced at cryogenic temperature. To mitigate this problem, we probe the possibility of operating this chip at lower power supply voltages. Power consumption: V DD = 1.8 V 250 mW V DD = 2.5 V 500 mW Reference 1 Development of A 16:1 serializer for data transmission at 5 Gbps, Datao Gong et al, presented at the topical workshop on electronics in particle physics (TWEPP), Paris, France, Sep. 21-25, 2009. From room temperature to 77K VCSELDFBFP LaseYes Center wavelength Moves toward short side Optical Spectrumnarrow I TH Increase more than 10 times decrease V TH increase Light slope efficient Almost no change Drop when closing 77 K Almost no change


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