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Published byViolet McBride Modified over 9 years ago
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UniS Plastic Optical Fibre (POF) minimum in loss at 650nm
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UniS VCSEL Module
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UniS BREDSEL Images 1/2 of a BREDSEL chip Contact Pad VCSEL Alignment marker Size of a single BREDSEL chip
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UniS Device Structure Top Bragg Mirror: 35 pairs of Al 0.95 Ga 0.05 As / Al 0.5 Ga 0.5 As doped p-type plus selective oxidisation layer of Al 0.98 Ga 0.02 As. Bottom Bragg mirror: 54.5 pairs. Active Region: x4 quantum wells in a 1 cavity. The detailed thicknesses of the various layers were optimised for 665 nm operation. 50% AlGaAs 95% AlGaAs Grade 95% - 50% Grade 50% - 95% 50% AlGaAs Grade 50% - 95% 95% AlGaAs Grade 95% - 50% 50% AlGaAs 95% AlGaAs Grade 95% - 50% Grade 50% - 95% Grade 50% - 100% AlAs Grade 100% - 0% GaAs Substrate GaAs cap; 100A 30 periods 4 periods 54 periods Bottom mirror pair (n-type) Selective oxidation layer Top mirror pair (p-type) Active region; 4 QW’s
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UniSLocation EUROPE UNITED KINGDOM AND IRELAND SOUTH-EAST ENGLAND
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UniSProjects UV NIR MIR In(GaN) for blue/green/amber LEDs and blue/green lasers. Al(GaInP) for high power red lasers and red VCSELs for plastic fibre links. InGaAsP/AlGaInAs/GaInNAs and InAs/GaAs quantum dots for 1.3 m and 1.55 m telecommunications lasers. In(GaSb) for 2 m-6 m lasers for gas- sensing applications. Increasing wavelength
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