1. IEE5328 Nanodevice Transport Theory and Computational Tools Prof. Ming-Jer Chen Dept. Electronics Engineering National Chiao-Tung University Feb. 20, 2013 Lecture 1: Introduction 1IEE5328 Prof. MJ Chen NCTU

2. Can we survive in the highly-challenging but widely-controversial future? IEE5328 Prof. MJ Chen NCTU2 Motivation of this Nano Course

3. - Advanced Device Physics - Hands-on Calculations IEE5328 Prof. MJ Chen NCTU3 Two Elements of the Course

4. Industry Compatible ITRS Oriented Covering FETs down to 3-nm node 4 ITRS : International Technology Roadmap for Semiconductors Three Features of the Course: IEE5328 Prof. MJ Chen NCTU

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6. 6 FETs Down-Scaling IEE5328 Prof. MJ Chen NCTU

7. 7 Polysilicon Gate Bulk Planar Extension Strained Silicon Channel Substrate/Channel Orientation IEE5328 Prof. MJ Chen NCTU

8. 8 High-k Metal Gate Bulk Planar Extension Strained Silicon Channel Substrate/Channel Orientation IEE5328 Prof. MJ Chen NCTU

9. 9 Strained Silicon/Germanium/GaAs Channel Substrate/Channel Orientation R sd issue High-k Metal Gate FinFETs or Multi-Gate FETs Planar Structure Vertical Structure IEE5328 Prof. MJ Chen NCTU TSMC 10, 14, and 16 nm TSMC 20 nm

10. IEE5328 Prof. MJ Chen NCTU10 ITRS Roadmap

11. 11 High-Performance NanoFETs projected by ITRS 2011 (http://www.itrs.net) (Bulk and SOI) IEE5328 Prof. MJ Chen NCTU

12. 12 High-Performance FETs projected by ITRS 2011 (http://www.itrs.net) (Bulk and SOI) IEE5328 Prof. MJ Chen NCTU

13. 13 High-Performance FETs projected by ITRS 2011 (http://www.itrs.net) (Multi-Gates and SOI) IEE5328 Prof. MJ Chen NCTU

14. 14 High-Performance FETs projected by ITRS 2011 (http://www.itrs.net) (Multi-Gates and SOI) IEE5328 Prof. MJ Chen NCTU

15. 15 Low-Power NanoFETs projected by ITRS 2011 (http://www.itrs.net) (Bulk, SOI, and Multi-Gates) IEE5328 Prof. MJ Chen NCTU

16. 16 Low-Power NanoFETs projected by ITRS 2011 (http://www.itrs.net) (Bulk, SOI, and Multi-Gates) IEE5328 Prof. MJ Chen NCTU

17. 17 EOT down to around 0.5 nm - Tunneling - Additional Mobility Degradation Feature Size (Channel Length) down to 3 nm - Non-equilibrium Transport - DIBL Penetration - Tunneling Two Key Projections by ITRS: Printed Gate Length: as in layout phase Physical Gate Length Lg: post-processing as determined by TEM or C-V fitting Channel Length L: Physical Gate Length Lg minus 2 times the overlap extension Lov IEE5328 Prof. MJ Chen NCTU

18. The Purposes of the Course: -Provide Advanced Device Physics for a working nanoFET -Capture Key Points behind nanoFETs data and structures, simply through hands-on calculations 18IEE5328 Prof. MJ Chen NCTU

19. You will do during this course: -Capture Advanced Device Physics -Read good papers -Derive models and do calculations, given TCAD and/or experimental data - Also run TCAD -Establish Physical Pictures of your own 19IEE5328 Prof. MJ Chen NCTU

20. Course Contents 20IEE5328 Prof. MJ Chen NCTU

21. MOS Energy Band Diagrams C-V Defects, Oxygen Vacancies Tunneling Paths Models, TCAD, Experimental Data, Calculation, and Fitting 1. High-k Metal-Gate Stacks: MOS Electrostatics 21 2. High-k Metal-Gate FETs: Channel Mobility Quantum Confinement Band Structure Coulomb Impurity Scattering, Phonon Scattering, Surface Roughness Scattering Remote Interface Plasmons Scattering, Remote Coulomb (Defects) Scattering, Remote Soft Phonon Scattering Models, TCAD, Experimental Data, Calculation, and Fitting IEE5328 Prof. MJ Chen NCTU

22. Energy Band Diagrams Tunneling Paths Models, TCAD, Experimental Data, Calculation, and Fitting 3. Band-to-Band Tunneling 22 4. Ballistic and Backscattering in Channel Energy Band Diagrams 2-D versus 1-D Models, TCAD, Experimental Data, Calculation, and Fitting IEE5328 Prof. MJ Chen NCTU

23. Energy Band Diagrams Ballistic Mobility Scattering by Highly-Doped Source/Drain Plasmons Source Starvation Models, TCAD, Experimental Data, Calculation, and Fitting 5. Degraded Mobility and Saturation Current with Shrinking L 23 6. Threshold Roll-off and DIBL Penetration (Electrostatics from Source and Drain) Energy Band Diagrams 2-D versus 1-D Models, TCAD, Experimental Data, Calculation, and Fitting IEE5328 Prof. MJ Chen NCTU

24. Ultrathin Source/Drain Extension Junction Components of Series Resistance R sd Models, TCAD, Experimental Data, Calculation, and Fitting 7. Other Issues of Significance - I 24 8. Other Issues of Significance - II Alternative Channel Materials: Ge, GaAs, and Graphene Models, TCAD, Experimental Data, Calculation, and Fitting IEE5328 Prof. MJ Chen NCTU

25. Lecture Notes, Prof. Ming-Jer Chen, 2013. Literature Papers 25 Course Material to be Delivered: IEE5328 Prof. MJ Chen NCTU

26. Taken-Home Works and Reports Only 26IEE5328 Prof. MJ Chen NCTU Grading