1. 1 Prof. Ming-Jer Chen Department of Electronics Engineering National Chiao-Tung University 09/17/2012 09/17/2012 DEE4521 Semiconductor Device Physics Lecture 1: Introduction

2. 2 On this Course Device Physics is Fundamental to EE Disciplines.

3. 3 Pioneers of Device Physics WILLIAM SH O C K L E Y Transistor technology evokes new physics Nobel Lecture, December 11, 1956 JOHN BA R D E E N Semiconductor research leading to the point contact transistor Nobel Lecture, December 11, 1956 WALTER H. BRATTAIN Surface properties of semiconductors Nobel Lecture, December 11, 1956 http://www.nobelprize.org/

4. 4 Importance of the Course TSMC is next to the World-Class Level Competitor, Intel. Moore’s Law will again be Effective in the next 20 Years. (20 nm and beyond; 3-D device; Si ==> Ge, GaAs, etc.) Currently, the significance of device physics dramatically increases.

5. 5 SOP in Class Experiment Oriented Thinking Understanding Analogy Skipping (or Subtracting) Picture Calculation

6. 6 Contents of the Course

7. 7 1. Physics of Bulk Semiconductors (Si, Ge, and GaAs) -Conduction- and Valence-Band Structures -Electrons and Holes -Energy Band Diagram -Density-of-States (DOS) -Effective Mass -Fermi Level and Thermal Equilibrium -Fermi-Dirac Statistics and Carrier Population

8. 8 2. Physics and Modeling of a Metal-Semiconductor Contact System -Energy Band Diagram -Ohmic Contact - Schottky Contact

9. 9 3. Physics of Carrier Transport in Semiconductors -Energy Band Diagrams -Drift and Diffusion -Scattering Events and Mobility - Generation and Recombination, Optical Injection, and Continuity Equation

10. 10 4. Physics and Modeling of a p-n Junction Diode -Energy Band Diagram -Forward and Reverse Mode -Depletion and Quasi-Neutral Regions -Thermionic Injection Over the Junction Barrier - Tunneling through the Barrier

11. 5. Physics and Modeling of a MOS System -Energy Band Diagram -Quantum Confinement - Surface Modulation: Accumulation, Flat-band, Depletion, and Inversion -Electrostatics - C/V

12. 12 6. MOSFET Device Physics and Modeling 7. Bipolar Transistor Physics and Modeling

13. 13 Some Textbooks Suggested 1. Richard Anderson and Betty Lise Anderson, “Fundamental of Semiconductor Devices”, McGraw-Hill, 1st Edition, 2005. (General; more examples of Q&A) (Ohio) 2. Robert Pierret, “Advanced Semiconductor Fundamentals”, Addison-Wesley, 1987. (Classical; no examples of Q&A) (Purdue) Chenming C. Hu, “Modern Semiconductor Devices for Integrated Circuits”, Pearson Education, 2010. (Concise; enough examples of Q&A) (Berkeley) 3. Donald A. Neamen, “Semiconductor Physics and Devices – Basic Principles” McGraw-Hill, 4th Edition, 2012. (General; more examples of Q&A) (New Mexico) 4.

14. 14 Four Exams (85%) - three midterm exams - one final exam Series of Homeworks (15%). Grading

15. 15 Office Hours (Room 535): 11:00am to 5:00pm, Tuesday, Thursday, Friday Course Website: http://web.it.nctu.edu.tw/~SMS TA: L. M. Chang 張立鳴 and C. L. Chen 陳泉利