1. NanoImprinting lithography
EVG-620

2. EVG-620 imprinting parameters
NanoImprinting lithography by EVG-620
EVG-620 imprinting parameters
Spin-coating: 1st rpm for 20 sec
2nd 5000rpm for 30 sec
0.64 um
0.66 um
0.71 um
Residual layer:0.67 ± 0.03 um

3. Spin-coating parameters test
Residual layer
Result
1st rpm
2nd 1000 rpm
5.86 um
2nd 4000 rpm
1.8 um
2nd 5000 rpm
0.67 um
★ The residual layer could been tuned by control the
parameters of spin-coating process.

4. Mold線距 2.58 μm
pattern線寬 2.41 μm
Application to OLED

5. Hot Embossing Lithography
EVG-501

6. Hot Embossing lithography by EVG-501
Contact Force
Topside Heater
Bottom Side Heater
Pressure Disc (Stainless Steel)
Substrate
Stamp
contact force :2” (kg/cm2)
4” 1050 (kg/cm2)

7. The lists of EVG-501 EVG-501 image of EVG-501 Contact force(kg/cm2)
12.95
Contact type
pneumatic
Vacuum (bar)
10-2
Cooling type
Purge
Programming
Auto
Temperature
550℃
Heater type
Top : heating coil,
Bottom:lamp heating

8. Hot Embossing parameter
No.
condition
Original
Residual layer
Profile depth
SEM Data 1
substrate：PET
Resistor Tg：~40 ℃)
Mold：4” (5/20/30 um)
temp：130℃
Contact force：1050kg/cm2
Piston down time：5 min
Separate temp:100 ℃
C:8.7
E:7.5
(um)
C:7
E:7
C:0.56
E:0.32 2
substrate ：silicon
Resistor Tg：~42 ℃
temp：160℃
E:2.7
C:3.1
E:2.3
C:0.35
E:0.21
5um
5um
20um
5um
4” (5um) template depth: Center 0.8~0.9 um
Edge 1.0~1.1 um

9. 80nm-pattern transferred by EVG501
Images of SEM
Si-Mold
(1” × 1”, 80nm)
Hot Embossong
on Si substrate