1. Metrology for Nanomanufacturing Vladimir A. Ukraintsev Texas Instruments, Inc.

2. Contributors: Christoph Wasshuber Bob Doering Mark Rodder Allen Bowling Dennis Buss Hans Stork

3. TI/SiTDNNI Instrumentation & Metrology3 Current Needs  IC with 25-35 nm gates are in development –Gate CD control range~ 3-4 nm (300 mm wafer!) –Gate LER better than ~ 1 nm (1  ) –Gate dielectric thickness control range ~ 0.1 nm –Post STI CMP (pre-gate) topography ~ 10-15 nm  Total Measurement Uncertainty (TMU) ~ Range × 0.2  2004 challenges: 3D CD metrology –High-resolution “in-die” 3D CD metrology with TMU < 1 nm (true bottom CD, line & trench profile, high frequency LER) complexmaterial stacks –Physical & electrical metrology of complex material stacks (concentration, porosity, interfacial defects, stress, mobility)

4. TI/SiTDNNI Instrumentation & Metrology4 Future Needs  Lack of robust & inexpensive manufacturing solution is often a show stopper for novel nanotechnology  Assumptions: –CMOS to be a primary IC technology for next 10-15 years –Patterning by lithography with elements of self-assembly –Hybrid IC with elements of charge based nanodevices connected to the outside world through MOSFET  Metrology needs: tomography –Non-destructive 3D tomography with atomic-resolution capable of CD metrology & elemental analysis interfaces –High-resolution physical & electrical characterization of interfaces (composition, atomic structure, defects, traps, energy structure, charge, stress, mobility, etc.)

5. TI/SiTDNNI Instrumentation & Metrology5 Challenges: Probe of atomic size  Non-destructive “in-die” 3D microscopy with atomic resolution. Probe of atomic size is a challenge. Breakthrough is needed: novel SPM, X-ray scattering, e-holography, etc. single atom detection characterization  Non-destructive single atom detection, chemical & electrical state characterization. Ultra high signal-to- noise detection is a challenge. Breakthrough in spectroscopy is needed: EDS, EELS, NMR, RBS, etc.