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Nanowire Doping via Monolayer Doping Patrick Bennett, AS&T Ho, et. al. Nature Materials 7, 62-67 (2008)

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Presentation on theme: "Nanowire Doping via Monolayer Doping Patrick Bennett, AS&T Ho, et. al. Nature Materials 7, 62-67 (2008)"— Presentation transcript:

1 Nanowire Doping via Monolayer Doping Patrick Bennett, AS&T Ho, et. al. Nature Materials 7, 62-67 (2008)

2 Motivation Ions have sufficient energy to pass through a nanowire without stopping, yet still causing serious lattice damage. Spin on techniques lack control and uniformity at the nanoscale. Ho, et. al. Nature Materials 7, 62-67 (2008)

3 Process Outline Process carried out in glove box in N 2 environment Ho, et. al. Nature Materials 7, 62-67 (2008)

4 Results Low amount of post deposition oxidation (inset unreacted substrate) Dopant profile similar to conventional techniques (limited source) Observed self limiting surface reaction for both P (Diethyl 1-propylphosphonate) and B (allyboronic acid pinacol ester) dopants X-Ray Photoelectron Spectrometry (24 Hrs elapsed) Si-C bond Si-O bond Ambient exposure Ho, et. al. Nature Materials 7, 62-67 (2008)

5 Results, continued 33% efficiency of Boron doping (deduced from theoretical coverage and sheet resistance). Cut in half without capping. 95% efficiency for Phosphorus. Due to decreased diffusivity of P in SiO 2 R S std. dev. across sample: 2-5% High reproducibility P B Ho, et. al. Nature Materials 7, 62-67 (2008)

6 Dose Modulation Reduction of Binding sites for precursor Mixed solution of blank (dodecene) and dopant (B) precursors Equivalent five and twentyfold decrease in dose suggests similar surface reactivity Tunability of doping via precursor structure Footprint of precursor molecule governs surface concentration 6x reduction in dose using trioctylphosphine oxide (TOP) over DPP 6x footprint Ho, et. al. Nature Materials 7, 62-67 (2008)

7 Nanowires Proof of concept: 2 terminal device (back gated) Ohmic contacts formed with DPP n-type switching obtained with TOP(400x enlargement??) I ON /I OFF ratio of 10 3 1D doping profile not modeled. Applied with more success to ultrathin SOI substrates (data not shown) Ho, et. al. Nature Materials 7, 62-67 (2008)

8 Summary Novel doping technique Highly controllable in bulk Proof of concept, successfully doped nanowires Ho, et. al. Nature Materials 7, 62-67 (2008) Comments Carried out in restrictive environment, but not in vacuum (except for capping in e-beam evaporator) Very shallow junction depth Poor control over nanowire doping (expect more papers soon I’d assume)

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