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Structure and Operation of the MOSFET 9 and 11 March 2015
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FET Circa 1964-Commercial Introduction First FET IC Circa 1964 By RCA
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MOS Inversion Layer 10 - - - - - - - - - - - - + - Metal layer Oxide layer P-type + + + + + + + + + + + + + n-type inversion layer With large positive gate bias, there will be electrons at the interface between the oxide and semiconductor, which leads to formation of a thin n-type inversion layer Threshold voltage V T : applied gate voltage required to achieve the threshold inversion
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Voltage-Current Relationship of NMOS (1) 13
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Voltage-Current Relationship of NMOS (1) 20
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