1. Silicon strip tests Silicon upgrade workshop in Nashville June 9, 2003 Yuji Goto (RIKEN/RBRC)

2. June 9, 2003Yuji Goto (RIKEN/RBRC)2 Silicon strip sensor prototype v1 –by Zheng Li (BNL instrumentation div.) –2-dimensional single-sided sensor x u x u

3. June 9, 2003Yuji Goto (RIKEN/RBRC)3 Silicon strip sensor prototype v1 –2 metal (Al) layers –thickness: 400  m and 250  m –DC coupling –full depletion at ~80 V –capacitance ~10 pF –leakage current ~10 nA

4. June 9, 2003Yuji Goto (RIKEN/RBRC)4 Silicon strip sensor R&D items –charge division –noise level –position resolution –efficiency test readout with VA2

5. June 9, 2003Yuji Goto (RIKEN/RBRC)5  -source test setup – 90 Sr: end point 2.28MeV purpose –calibration –dead/hot channel map

6. June 9, 2003Yuji Goto (RIKEN/RBRC)6  -source test clustering –S/N charge division –A Q ~ 0.18 x > uu > x 400  m thickness +50V bias x: S/N 400  m: 13.23  0.17 250  m: 7.97  0.08 u: S/N 400  m: 16.91  0.18 250  m: 7.51  0.10

7. June 9, 2003Yuji Goto (RIKEN/RBRC)7 KEK beam test KEK-PS T1 beam line –0.5-2.0 GeV/c charged particles –tracking with clusters on 2 nd -6 th board

8. June 9, 2003Yuji Goto (RIKEN/RBRC)8 KEK beam test position resolution –23  m-26  m –expected: 80  m/  12=23  m efficiency Si numberefficiency 2(250um)61.45±1.91 3(400um)96.41±2.87 4(400um)98.23±2.88 5(400um)87.29±2.66 6(250um)58.33±1.82 Si numberResidual x(μm) 2(250um)52.66±0.2150.99±0.20 3(400um)35.73±0.0843.08±0.13 4(400um)43.76±0.1337.53±0.90 5(400um)34.45±0.0843.49±0.13 6(250um)48.66±0.1745.63±0.15

9. June 9, 2003Yuji Goto (RIKEN/RBRC)9 KEK beam test charge division –diffusion of hole-electron pair might be smaller than p+ electrode size, and the hole is collected by local x or u line (7  m line + 6  m gap) …

10. June 9, 2003Yuji Goto (RIKEN/RBRC)10 Schedule prototype v2 –v1: 7  m line + 6  m gap, 3 turns –v2: 5  m line + 3  m gap, 5 turns laser test bench will be made to investigate local effect test with SVX4 + ORNL ROC/FEM prototype –in September ?