1. SCHOTTKY-BARRIER CONTACTS to CARBON NANOTUBE FETs L.C. Castro, D.L. John and D.L. Pulfrey Department of Electrical and Computer Engineering University of British Columbia Vancouver, B.C. V6T1Z4, Canada pulfrey@ece.ubc.ca IEEE COMMAD 2002, Sydney, Australia

2. CARBON NANOTUBE FET STRUCTURES gate Oxide (15 nm) Planar FET (courtesy R. Martel, IBM) Coaxial FET (UBC) IEEE COMMAD 2002, Sydney, Australia

3. CONDUCTION BAND PROFILES VARIOUS V GS, V DS IEEE COMMAD 2002, Sydney, Australia

4. SOLVING FOR THE POTENTIAL PROFILE IEEE COMMAD 2002, Sydney, Australia E f(E) EFEF 0.5

5. NON-EQUILIBRIUM ELECTRON DISTRIBUTIONS IEEE COMMAD 2002, Sydney, Australia

6. SOLVE FOR THE DRAIN CURRENT IEEE COMMAD 2002, Sydney, Australia As the overall system transmission probability, is now known, Landauer’s expression for the current can be employed:

7. DRAIN CHARACTERISTICS IEEE COMMAD 2002, Sydney, Australia

8. COMPARISON WITH NON-SB MODEL IEEE COMMAD 2002, Sydney, Australia

9. CONCLUSIONS Schottky barriers play a crucial role in determining the drain current. More detailed characterization of the contact is needed. Complete solution for the potential profile is needed. IEEE COMMAD 2002, Sydney, Australia

10. Hole injection at high V DS

11. Work-function Engineering L.C. Castro Effect of work- function difference for V DS < V GS Legend:  MS = 0 eV  MS = -0.2 eV

12. Source and Drain Contact Work-function Engineering L.C. Castro