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SCHOTTKY-BARRIER CONTACTS to CARBON NANOTUBE FETs L.C. Castro, D.L. John and D.L. Pulfrey Department of Electrical and Computer Engineering University of British Columbia Vancouver, B.C. V6T1Z4, Canada pulfrey@ece.ubc.ca IEEE COMMAD 2002, Sydney, Australia
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CARBON NANOTUBE FET STRUCTURES gate Oxide (15 nm) Planar FET (courtesy R. Martel, IBM) Coaxial FET (UBC) IEEE COMMAD 2002, Sydney, Australia
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CONDUCTION BAND PROFILES VARIOUS V GS, V DS IEEE COMMAD 2002, Sydney, Australia
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SOLVING FOR THE POTENTIAL PROFILE IEEE COMMAD 2002, Sydney, Australia E f(E) EFEF 0.5
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NON-EQUILIBRIUM ELECTRON DISTRIBUTIONS IEEE COMMAD 2002, Sydney, Australia
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SOLVE FOR THE DRAIN CURRENT IEEE COMMAD 2002, Sydney, Australia As the overall system transmission probability, is now known, Landauer’s expression for the current can be employed:
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DRAIN CHARACTERISTICS IEEE COMMAD 2002, Sydney, Australia
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COMPARISON WITH NON-SB MODEL IEEE COMMAD 2002, Sydney, Australia
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CONCLUSIONS Schottky barriers play a crucial role in determining the drain current. More detailed characterization of the contact is needed. Complete solution for the potential profile is needed. IEEE COMMAD 2002, Sydney, Australia
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Hole injection at high V DS
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Work-function Engineering L.C. Castro Effect of work- function difference for V DS < V GS Legend: MS = 0 eV MS = -0.2 eV
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Source and Drain Contact Work-function Engineering L.C. Castro
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