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Waveguide Ge-PD Simulation

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Presentation on theme: "Waveguide Ge-PD Simulation"— Presentation transcript:

1 Waveguide Ge-PD Simulation
Jeong-Min Lee

2 Ge-PD Simulation Lumerical Device Lumerical FDTD
Current-voltage characteristic Band structure Charge (Jn, Jp, …) Doping (NA, ND, ...) Electrostatics (E, V, …) Mobility (μn, μp, …) Lumerical FDTD Photo-generated carriers

3 Ge-PD Structure <Top-view> <Cross-section>
Doping concentration P-type Si: 2x1018 /cm3 (constant doping) i-Ge: 2x1013 /cm3 (constant doping) N-type Ge: ~ 5x1018 /cm3 (diffusion doping)

4 Procedure Configure materials Draw & configure 3-D structure of Ge-PD
Draw & configure doping layers P-type, intrinsic, n-type Draw & configure device region Simulation area Define & configure electrical contacts Cathode, anode Device simulation Electric field, dark current simulation FDTD simulation Photo-generated carrier calculation Photocurrent, responsivity simulation

5 Material Setting: Ge

6 Oxide

7 Silicon Substrate

8 Silicon Taper

9 Ge

10 Cathode

11 Anode & 5.3 (another anode)

12 P-Type Si (Constant Doping)

13 Intrinsic Ge (Constant Doping)

14 N-Type Si (Diffusion Doping)

15 Device Region: Simulation Area
 2D simulation (/μm)  PD length

16 Device Region Setting (Simulation Area)

17 Electrical Contact Setting

18 Simulation Results: Doping Profile

19 Simulation Results: Electric Field Distribution
At VR = 2V

20 Simulation Results: Cathode Current (Dark)

21 Simulation Results: Anode Current (Dark)

22 FDTD: Structure 1. Draw structure

23 FDTD Simulation Region
1 2 3 4

24 Source (1/2): Mode Source

25 Source (2/2): Mode Select
4 3 5

26 Generation Rate 1 2 4 5 3 6. Click Run

27 Edit Code sourceintensity(f)  sourcepower(f)

28 Make Generation Rate File
Make ‘CW_generation.mat’ file in working directory

29 Device: Import Generation Rate
1 2 3

30 Simulation Results: Photocurrent (Cathode)

31 Simulation Results: Responsivity
Load ‘Bias vs. Responsivity.lsf’ Run

32 Code Bias vs. Responsivity.lsf Pin=1e-3; # Watts
I=-2*getdata("Device region", "anode.I"); V=linspace(0,4,5); Resp=I/Pin; plot(V,I*1e6,"photo detector bias voltage(V)","I_(illumination) uA "); plot(V,Resp,"photo detector bias voltage(V)","Responsivity (A/W) ");

33 Exercise Draw same structure of Ge p-i-n PD.
Doping concentration conditions: P-type: 2x1019 /cm3 Intrinsic: 2x1013 /cm3 N-type: 5x1019 /cm3 (ref concentration: 1x1017 /cm3) Plot doping profiles (NA, ND). Plot electric-field profiles at 1- and 4-V reverse bias voltage. Plot dark current, photocurrent, and responsivity according to reverse bias voltages from 0 to 4V.


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