1. R. Bradford 10 December, 2014 Sensor Details

2. Explanation Submitted some designs that will be included on the Novati/Tezzaron submission. Designs based on AGIPD sensor – Chose to modify a published design because I had very little time to simulate a new design. – Modified for pixel size, p-stop, comments from previous discussions, fabrication process, etc. Wanted to document what was submitted A few caveats: – Uncertain if we will use these devices to produce hybrids: People at design review in December seemed uncertain about quality of final devices from fab. Device is pretty elaborate; final design could be more simple. – Will be studying designs with Silvaco in coming months, so final design may change. – BNL will also fabricate n-in-n devices, so there will be some influence from Pete Siddons and Wei Chen. 2 Additional Field for Division /Organization/Sponsor/Meeting name

3. What was submitted? Distance to cut measured from edge of last pixel row to nominal edge of sensor. Includes guard rings. Bond pad locations: LM= Lower Middle; LL= Lower Left; C= Center. DesignPixel Size (  m) # of Guard Rings Distance to cut (  m) Implant Size (  m) Bond Pad Location 1 (AGIPD)200151210180LM 2200151210180LL 310015121090C 410015121065C 52008492.5180LM 62008492.5180LL 71008492.590C 81008492.565C

4. Design 1: 15 guard rings Bond pads for connection to ASIC ground. Pads are not on a regular grid in this design. Bond pad size: 50  m in all designs. Pixels are 200  m 5620  m Nominally, 1210  m from cut to edge of first pixel. Reproduces AGIPD design with minimal modification. Not practical to use, but included as something of a control.

5. Design 2: Same overall dimensions as Design 1, but bond pads placed on standardized grid with 200  m pitch. Except for the larger pitch, the pads layout is identical to the grid used on sensors with 100  m pitch. 200  m

6. Design 3: Same overall dimensions as Design 1, but with 100  m pixel pitch. Bond pads lie on regular 100  m grid. 100  m

7. Design 4 Similar to Design 3, but with smaller implant. Bond pad layout is identical. Same overall dimensions as Design 1.

8. Comments on Designs 5-8 Designs 5-8 are identical to Designs 1-4, but only have 8 guard rings. – Distance from outer pixel edge to edge of sensor is 492.5  m. If we bond any of the p-type sensors, it will likely be Designs 7 and 8 – Will show 7 and 8 on next 2 slides.

9. Design 7 4325  m Very similar to Design 3: 100  m pixel pitch with bond pads lying on exact same grid. Blue and green borders are to aid in wafer dicing. These are present on all sensors, but simply don’t show on the slides for Designs 1-4. Blue is an oxide opening marking possible path for the cut, and the green is Al. Blue will disappear after dicing, but the Al marks the actual edge of the sensor. 492.5  m (nominally) from cut to edge of outer pixels.

10. Design 8 Very similar to Design 4, but with fewer guard rings. 100  m pixels, but with smaller implants.

11. Standard bond pad layout Bond pad size: 50  m diameter Bond pad pitch: 100  m Overall grid layout: 32 columns x 33 rows. One extra row of pads is included to allow inner guard ring to connect to ASIC ground on one edge. 3250  m

12. Space available for wire bond pads ASIC We’ve discussed an arrangement where the bump-bond pads are pushed to one corner of the prototype ASIC and the wire bond pads are laid out along 2 edges. The sensor would be displaced from the ASIC center, as shown here. In this arrangement, a 5 mm x 5 mm ASIC will have a 1200-1300  m-wide border on two edges for wire bonding. In this graphic, the ASIC extends 50  m past the pixel array on sides not exposed for bump bonding. Edges available for wire bonding are 1257.5  m wide. 3742.5  m