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Recall Lecture 17 MOSFET DC Analysis 1.Using GS (SG) Loop to calculate V GS Remember that there is NO gate current! 2.Assume in saturation Calculate I D using saturation equation 3.Find V DS (for NMOS) or V SD (for PMOS) Using DS (SD) loop 4.Calculate V DS sat or V SD sat 5.Confirm that V DS > V DS sat or V SD > V SD sat Confirm your assumption!
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APPLICATION OF MOSFETS
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Digital Logic Gates NOR gateNAND gate NOR gate response The NAND gate response 00High 00 50Low 50High 05Low 05High 55Low 55
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CHAPTER 7 Basic FET Amplifiers
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For linear amplifier function, FET is normally biased in the saturation region.
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AC PARAMETERS where
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The MOSFET Amplifier - COMMON SOURCE The output is measured at the drain terminal The gain is negative value Three types of common source – source grounded – with source resistor, R S – with bypass capacitor, C S
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Common Source - Source Grounded ●A Basic Common-Source Configuration: Assume that the transistor is biased in the saturation region by resistors R 1 and R 2, and the signal frequency is sufficiently large for the coupling capacitor to act essentially as a short circuit.
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EXAMPLE V DD = 5V R si R D = 10 k 0.5 k 520 k 320 k The transistor parameters are: V TN = 0.8V, K n = 0.2mA/V 2 and = 0. I D = 0.2441 mA g m = 0.442 mA/V
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Steps 1.Calculate R out 2.Calculate v o ________________________________________________________ 3.Find v gs in terms of v i 4.Calculate the voltage gain, Av
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1.The output resistance, R out = R D 2.The output voltage: v o = - g m v gs (R out ) = - g m v gs (10) = -4.42 v gs 3.The gate-to-source voltage:, R i = R TH v gs = [198.1 / (198.1 + 0.5 )] = 0.9975 v i v i = 1.0025 v gs 4.So the small-signal voltage gain: A v = v o / v i = - 4.42 v gs / 1.0025 v gs - 4.41 R TH 198.1 k 0.5 k R D = 10 k 0.442 v gs
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Type 2: With Source Resistor, R S V TN = 1V, K n = 1.0mA / V
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V G = ( 200 / 300 ) x 3 = 2 V Hence, KVL at GS Loop: V GS + I D R S – V TH = 0 V GS = 2 – 3I D KVL at DS loop V DS + 10 I D + 3I D – 3 = 0 V DS = 3 -13 I D Assume biased in saturation mode: Hence, I D = 1.0 (2 – 3I D - 1 ) 2 = 1.0 (1 – 3I D ) 2 9 I D 2 – 7 I D + 1 = 0 Perform DC analysis Assume transistor in saturation V TN = 1V, K n = 1.0 mA / V
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I D = 0.589 mAI D = 0.19 mA V DS sat = V GS - V TN = 1.43 – 1.0 = 0.43 V 0.53 V > 0.43 V Transistor in saturation Assumption is correct! V GS = 2 – 3I D = 0.233 < V TN V GS = 2 – 3I D = 1.43 V > V TN MOSFET is OFF OK V DS = 3 -13 I D = 0.53 V Not OK
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Steps 1.Calculate R out 2.Calculate v o ________________________________________________________ 3.Find v ’ in terms of v gs 4.Find v’ in terms of v i 5.Calculate the voltage gain, Av
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1.The output resistance, R o = R D 2.The output voltage: 3.Find v’ v ’ = v gs + g m v gs R S v’ = v gs (1 + 2.616) = 3.616 v gs v o = - g m v gs R D = - 0.872 ( v gs ) (10) = - 8.72 v gs R TH 66.67 k R D = 10 k R S = 3 k g m = 0.872 mA/V + V’ -
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5. Calculate the voltage gain A V = v o / v i = - 8.72 v gs / 3.616 v gs = - 2.41 4. Find v’ in terms of v i : using voltage divider R TH 66.67 k R D = 10 k R S = 3 k + V’ - v’ = [R TH / (R si + R TH )] v i But in this circuit, R si = 0 so, v’ = v i = 3.616 v gs
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Circuit with Source Bypass Capacitor ●An source bypass capacitor can be used to effectively create a short circuit path during ac analysis hence avoiding the effect R S ●C S becomes a short circuit path – bypass R S ; hence similar to Type 1 Type 3: With Source Bypass Capacitor, C S
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Steps 1.Calculate R out 2.Calculate v o ________________________________________________________ 3.Find v gs in terms of v i 4.Calculate the voltage gain, Av
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I Q = 0.5 mA hence, I D = 0.5 mA g m = 2 K n I D = 1.414 mA/V r o = R G 200 k R D = 7 k 1.414 v gs
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1.The output resistance, R out = R D 2.The output voltage: v o = - g m v gs (R D ) = -1.414 (7) v gs = - 9.898 v gs 3. The gate-to-source voltage: v gs = v i in parallel ( no need voltage divider) 4. So the small-signal voltage gain: A v = -9.898 v gs / v gs = - 9.898
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The MOSFET Amplifier - COMMON DRAIN The output is measured at the source terminal The gain is positive value
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R TH 150 k 470 k 0.75 k 113.71 k 0.5 k I D = 8 mA, K n = 4 mA /V 2 g m = 2 K n I D = 11.3 mA/V
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Steps 1.Calculate R out 2.Calculate v o ________________________________________________________ 3.Find v ’ in terms of v gs 4.Find v’ in terms of v i 5.Calculate the voltage gain, Av
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1.The output resistance: 2.The output voltage 3.v’ in terms of v gs using supermesh: 4.v’ in terms of v i : 5.The voltage gain v gs + g m v gs (r o R S ) – v’ = 0 v’ = v gs + 8 v gs = 9 v gs v o = g m v gs (r o R S ) = 11.3 v gs (0.70755) = 8 v gs v’ = (R TH / R TH + R Si ) v i = 0.9956 v i 9v gs = 0.9956 v i v i = 9.040 v gs + v’ - g m = 2 K n I D = 11.3 mA/V A v = v o / v i = 8 v gs / 9.040 v gs = 0.885 R o = ro || R s
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+-+- Vx Ix r o || R s = 0.708 k v gs in terms of V x where v gs = -V x - V x + g m v gs + I x = 0 0.708 - V x - g m V x + I x = 0 0.708 - 1.412 V x – 11.3 V x + I x = 0 I x = 12.712 V x 0.079 k Output Resistance for Common Drain
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