1. Atomic Layer Deposition - ALD
Introduction
Example of Al2O3
ALD at MiNaLab
Deposition materials
Advantages and disadvantages
Summary

2. Atomic Layer Deposition
Excellent thickness controll and step coverage
Self-limited process
Developed in 1974
First industrial use: electrolumenicent panels

3. Some opportunities of ALD
Nanolaminate:
ZrO2 and SiO2
Coated deep trench structure

4. ALD of Al2O3 on Si

5. ALD at MiNaLab
Al2O3, ZnO, TiO2
Thickness: sub nm nm

6. ALD – deposited materials
Oxides (Al2O3, ZnO, TiO2, HfO2 , HfSiO,
La2O3, SiO2, Ta2O5)
Nitrides (TiN, TaN, SiN, HfN, AlN)
Sulfides (ZnS)
Metals (Cu, W, Pt, Ru)

7. Applications High quality photonics Thin solarcells laminate =>
Thin gate oxides with high dielectric constant
Diffusion barriers and passivation of active layers
Single metal coating for catalysts

8. Advantages of ALD Low temperature deposition is possible
Excellent step coverage and reproducibility
High density film and no pinholes
Easy to scale up

9. Disadvantages of ALD Expensive equipment
Critical adjustment of the flow:
too much flow => clogging of valves
too low flow => under-performance

10. Summary ALD is excellent for: Thin films High density
Excellent stociometry controll
3D structures
Large area substrates: no problem 