EXPERIMENTAL Sapphire 25nm Buffer layer 5μm Undoped GaN Si doped n-GaN MQW 3 nm undoped InGaN well 12nm Si doped GaN barrier Mg doped p-AlGaN EBL 150nm.

EXPERIMENTAL Sapphire 25nm Buffer layer 5μm Undoped GaN Si doped n-GaN MQW 3 nm undoped InGaN well 12nm Si doped GaN barrier Mg doped p-AlGaN EBL 150nm Mg doped p-GaN ITO p-pad n-pad SampleAl composition Awithout an EBL B22% C32% LEDs with a size of 550 ˣ 550μm 2 1

20mAVoltage LED A3.03V LED B3.12V LED C3.20V 2

Fig. 2. (color online) Light output power vs current density of LEDs A, B, and C, (a) at low current density and (b) at high current density. 3

Fig. 3. (color online) EQE vs current density of LEDs A, B and C. 15 A/cm 2 4

Fig. 4. (color online) Calculated band diagrams of LEDs at 90 A/cm 2, (a) LED A, (b) LED B, and (c) LED C. Calculated carrier concentrations of LEDs at 90 A/cm 2, (d) LED A (e) LED B, and (f) LED C. 5

EXPERIMENTAL Sapphire 25nm Buffer layer 5μm Undoped GaN Si doped n-GaN MQW 3 nm undoped InGaN well 12nm Si doped GaN barrier Mg doped p-AlGaN EBL 150nm.

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Presentation on theme: "EXPERIMENTAL Sapphire 25nm Buffer layer 5μm Undoped GaN Si doped n-GaN MQW 3 nm undoped InGaN well 12nm Si doped GaN barrier Mg doped p-AlGaN EBL 150nm."— Presentation transcript:

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EXPERIMENTAL Sapphire 25nm Buffer layer 5μm Undoped GaN Si doped n-GaN MQW 3 nm undoped InGaN well 12nm Si doped GaN barrier Mg doped p-AlGaN EBL 150nm.

Similar presentations

Presentation on theme: "EXPERIMENTAL Sapphire 25nm Buffer layer 5μm Undoped GaN Si doped n-GaN MQW 3 nm undoped InGaN well 12nm Si doped GaN barrier Mg doped p-AlGaN EBL 150nm."— Presentation transcript:

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