1. TFA Gold Etchant (diluted 9:1) 24-26 Å / sec. Conditions: 2 mL concentrated TFA in 18 mL of DI H 2 O. Room temp. Clean room. Sample was agitated continuously by hand. Rinsed in DI H 2 O afterwards. Profilometry done at CHANL. Performed 12.05.09 – Dmitry

2. RIE etching (@ SMiF) Fe = 0 Å / sec. Nb = 9.25 - 15 Å / sec. Ge = 726 – 900 Å / sec. Conditions: 100 W, CF4 = 40 sccm, O2 = 4 sccm. Performed 06.02.09 – Alex and/or Liang Au Nb Fe Ge (15mm*15mm) 6 3 5 2 4 1 Each section is about 3mm*7mm

3. Plasma Asher (CHANL) S 1813 polymer. Non-linear. Conditions: 1 sccm O 2 flow, varied power. Etching profile of square device Performed 12.03.09 – Dmitry

4. 10 mM HCl 11-13 Å / sec. Conditions: 1mL of 3N (=3M) HCl diluted in ~ 300 mL of DI H 2 O. Continuously stirred with a magnetic stir bar. Washed with running DI H 2 O for 5+ min. Room temp., CHANL clean room. Profilometry done at CHANL. Mask – S1813. Performed 02.03.10 – Dmitry

5. ICP – RIE Fe etch (SMiF) 6-7 Å / sec. Conditions: SMiF Trion Minilock II. 300 W ICP, 125 W RIE. BCl 3 = 5±1 sccm, Cl 2 = 45±1 sccm. Manual runs to make sure flow is stabilized. Sample: Si substrate, Ti/Fe 60/1000 Å. Profilometry done at SMiF. Mask – S1813. Performed 11.02.11 – Dmitry Note: although the rate was not measured, the etch does go through the Ti wetting layer and Si substrate, albeit at 500 W ICP.