1. Activité LPNHE en 2012 et 2013 G.Calderini Tracker upgrade

2. IBL Phase-0 -Simulations of sensors and evaluation productions (during the last few years, now over for IBL) - Testbeams - IBL stave loading, testing and commissioning at Uni-GE and CERN - Mechanics (see Didier’s transparencies) Phase-2 and core R&D - Development of sensor simulations models - Edgeless sensors - Testbeam organization - Electronics and R&D on interconnections - ATLAS Track trigger (AM chip) The LPNHE group is involved both in Phase-0 (IBL) and Phase-2 activities

3. Planar Slim Edge sensors (CiS) - Oxygenated n-in-n - 200 um thick - guard rings under pixels - 215um inactive reg. 3D Slim Edge sensors (FBK +CNM) - p-type - 230 um thick - 200 um inactive reg. (Option 1: 100% planar pixel sensors) Option 2: 75% planar pixel, 25% 3D

4. ActivitiesStartingEnding FEI4-BSept 11: SubmissionDec 11 for wafer tests Bump bondingAug 11: pre-productionSept 12: Completion Module assemblyFeb 12: 1 st modules ready for loading Oct to Dec 12 Module loadingFeb 12:  4 staves to be ready by Apr/May 12 Jan 13: Completion Stave loadingSep 12: starting with the 1 st available staves Feb – Mar 13: Completion Final tests and commissioning Sep 12Jul 13: IBL Installation IBL schedule key dates LPNHE group should contribute to about two weeks of shifts (2012) and 3 weeks (2013) in the UNI-GE cleanroom

5. 2012 testbeam effort In 2012: 5 test-beams, about 30 persons in total to evaluate PPS and 3D (+DBM) The LPNHE group contributed with persons and hardware from our electronics pool.

6. Mechanics See Didiers’ transparencies

7. Phase-2 and core R&D Device simulations (Silvaco) General expertise Development of specific models Work to extend to n-in-p sensors the model of interface defect traps developed for n-in-n devices Insertion of intermediate levels in the gap to reproduce the Si/SiO2 interface defects After radiation and better describe the leakage current and breakdown behavior Good agreement with Measurements on our n-in-p device production

8. Edgeless sensors with DRIE (FBK/LPNHE project) Deep trench diffusion (to prevent electrical field on the damaged cut) Cut line Trench definition is critical: - aspect ratio: 20:1 - deep etching: 200-230um - trench width: 8-12um ● Goal: make the rim zone equipotential ● How: DRIE as for 3D process ● Trench doped by diffusion

12. Electronics Interest for 65nm electronics LPNHE is also part of the AIDA EU project (providing a number of IP blocks for WP3) Expertise in radiation tests from previous experiments of people (BaBar / ILC) Support card for OmegaPix irradiation tests Contributions to OmegaPix2 chips

13. One slide on track trigger FastTracKer : a hardware track finder for ATLAS Trigger Full silicon detector acceptance, pT > 1 GeV Tracks with ~offline quality reconstructed parameters available to level-2 processors FTK reads hits at L1 rate and reconstructs the event in ~100 μs Two step algorithm: Pattern recognition with Associative Memory (ASIC) Linear PCA-based track fit with FPGAs Associative Memory (AM) ASIC: the core processor of the pattern recognition stage. Evolution of the AMchip03 of SVT (CDF) Current prototype AMchip04 done and under testing: 65 nm technology (SVT chip was 180 nm) 8k patterns/chip (5k patterns/chip) Ternary logic for variable resolution (new feature) AMchip05 (FTK final chip candidate): 32k – 64k patterns Serial links

14. Persons involved at LPNHE T.Beau(MdC, P7) M. Bomben(CDD-HN) G.Calderini(DR2 CNRS) J.Chauveau(PR, P6) G.Marchiori(CR2 CNRS) P.Schwemling(PR, P7) D. Laporte(IE, CNRS) F. Crescioli(IR, CNRS) F. Dematos(IR, CNRS) O.Le Dortz(IR, CNRS) J.F. Genat(IR, CNRS) Funding / support expected/obtained from: ATLAS and laboratory (IN2P3) EUDET and AIDA EU projects Emergence (UPMC Project) EU FP7 (IAPP already approved project) L. Bosisio(invited from Univ.Trieste) R. Kass(invited from Ohio State U.)

15. Realizations/expenses 2012 1) Phase-0 achievements using funds 5 KE Testbeam and commissioning Mechanics prototyping Expenses IBL (missions excluded) Cleanroom material

16. 2) Phase-2 achievements using funds 3 KEFE-I4 wafer procurement 4 KEThin detector production (MPI) 10 KESemiconductor parameter analyzer (cards still to buy) FBK sensor production support Participation to n-in-p slim productions (MPI, down to 150um) as support for interconnection studies (see Abdenours’ talk) Total of 22KE engaged out of 21 received

17. Funding requests for 2013 1) ATLAS related general needs 0 KE 2) Strictly IBL-related 5 KEcleanroom ordinary metabolism (+ 18KE asked to Christophe to equip the Semiconductor parameters analyser with SMUs)

18. Funding requests for 2013 3) More general R&D 0* KEinterconnections 30 KEedgeless R&D (bump-bonding of produced devices, already mentioned last year) 5 KESIMS on produced devices 4 KESupport to ATLAS track trigger work 4 KEMechanics TOTAL: 50KE 4) Participation in RD50 2 KEparticipation (Missions not dicussed here)

19. backup

20. Installation of a 4 th pixel layer inside the current pixel detector: performance of current pixel detector will degrade before main tracker upgrade (Phase 2) maintain physics performance in high occupancy environment (higher granularity, r/o bandwidth) increase radiation hardness (IBL fluence ~ 5x B-Layer fluence)  Insertable B-Layer 250 Mrad TID and 5x10 15 n eq cm -2 installation originally planned for 2015-2016… advanced (in 2011) to 2013 (Fast-track IBL) IBL mounted on new beam pipe Length: ~64cm Envelope: R in = 31mm, R out =40mm 14 staves, 32 pixel sensors / stave. Front-end chip: FE-I4 (IBM 130 nm CMOS tech.) 50μm x 250μm 80(col) x 336 (rows) = 26880 cells. 2cm x 2cm!

22. A word on RD50 We have been contacted several times and invited to join the RD50 collaboration We think that this point has to be discussed more generally at ATLAS (/IN2P3) level. The fee is ~negligible (1400 CHF/year/group) but then sooner or later we will need to contribute to at least some of the RD50 detector productions (each time the contribution is typically of order of 5-10KE) Scientifically it would probably be worthwhile, but the funding aspect has to be discussed in ATLAS