1. 5/24/2001 1 DUV ASML 5500/90 Stepper for Novel Lithography SFR Workshop May 24, 2001 SFR:Andrew R. Neureuther, Mosong Cheng, Haolin Zhang SRC/DARPA Garth Robins, Mike Williamson, Lei Yuan Microlab: Sia Parsa, Kim Chan, Evan Stateler, Bob Hamilton MEMS: Sunil Behave, Richard Yeh Berkeley, CA 2001 GOAL: Complete initial simulations and experiments sufficient to design polarization masks and multi-parameter test structures 9/30/2001.

2. 5/24/2001 2 Motivation Small Feature Reproducibility at low k1, high NA with phase- shifting masks and chemically-amplified resists is a very complex engineering task. Modeling and simulation suggest many novel ideas for resolution enhancement, optical system characterization, resist processing and resist parameter extraction. The ASML DUV system provides a flexible optical tool for exploring novel approaches to projection printing and its characterization. Resolution below 1/3  m is also attractive for novel uses of lithography for MEMS and biological applications.

3. 5/24/2001 3 Donated/installed ASML with Cymer laser support (and assisted with unanticipated costs of $75K) DUV 248 nm, NA = 0.50,  = flex to 0.8? 29.7 mm diameter field Working Resolution –0.4 um with Berkeley masks –0.3 um with commercial $1500 masks –0.2 um with modified illumination –0.1 um (but 0.25 um pitch) with PSM Impact –IC technology and devices –MEMS, BIO, etc (due to resolution and field size) ASML DUV Stepper and Impact

4. 5/24/2001 4 ASML 5500/90 Tool and Track Light path Mask Port

5. 5/24/2001 5 Flexible Illumination System Hexagonal light pipe Fly’s eye that spreads light to cover mask

6. 5/24/2001 6 Inexpensive Commercial Masks with MEBES III CAPABILITY Resolution 1  m (0.2  m on wafer) Windage and grid 0.25  m to 0.10  m (0.05 to 0.02 on wafer) COST (100K flashes) 0.1  m tolerance $2000 0.25  m tolerance $1500 No inspection and less than 10% 0.1 grid $1000?

7. 5/24/2001 7 Special Test Mask and First Wafer Test Mask LER Determination Double Exposure Gratings Aberration Targets Basic Resolution Electrical Test Mask design for ASML 248nm NA= 0.5 experiments

8. 5/24/2001 8 Novel Lithography: Research and Synergy Image Quality –Aberrations including chromatic –Pattern dependent resolution enhancement –Polarization as a remaining degree of freedom Resist Modeling and Line End Shortening –Resist parameters including diffusion –Role of resist and image quality on performance Ultimate Resist Limits –Line edge roughness –Novel processing (Electric-field enhanced) –Novel materials (dendrimers)

9. 5/24/2001 9 2002 and 2003 Goals Conduct and quantitatively interpret polarization masks, and multi-parameter test structures, by 9/30/2002. Define apparatus, specify testing procedures, and interpret data for polarization masks, and multi-parameter test structures, by 9/30/2003. Slit for apodizing plate to set type of illumination Polarization orthogonal spillover Phase- shifted spillover Polarization adjusted half- tone Illumination Aberration Targets