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Layout design rules. 2 Introduction  Layout rules is also referred as design rules.  It is considered as a prescription for preparing photomasks. 

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Presentation on theme: "Layout design rules. 2 Introduction  Layout rules is also referred as design rules.  It is considered as a prescription for preparing photomasks. "— Presentation transcript:

1 Layout design rules

2 2 Introduction  Layout rules is also referred as design rules.  It is considered as a prescription for preparing photomasks.  Provides a link between circuit designer and processor engineer during manufacturing phase.  Design rules specify geometric constraints on the layout artwork. Objective:  To obtain a circuit with optimum yield.  To minimize the area of the circuit.  To provide long term reliability of the circuit.  Design rules represent the best compromise between performance and yield: More conservative rules increase yield. More aggressive rules increase performance. Design rules represent a tolerance that ensures high probability of correct fabrication - rather than a hard boundary between correct and incorrect fabrication.

3 3 Layout or Design Rules Two approaches to describing design rules: Lambda-based rules: Allow first order scaling by linearizing the resolution of the complete wafer implementation.  To move a design from 4 micron to 2 micron, simply reduce the value of lambda.  Worked well for 4 micron processes down to 1.2 micron processes.  However, in general, processes rarely shrink uniformly.  Probably not sufficient for submicron processes. Micron rules: List of minimum feature sizes and spacings for all masks, e.g., 3.25 microns for contact-poly-contact (transistor pitch) and 2.75 micron metal 1 contact-to-contact pitch.  Stated at some micron resolution, alpha(  ) and beta (  ) rules. Basic feature size is defined in terms of  while minimum grid size is described by .  and  may related by a constant factor.  Normal style for industry.

4 4 Layout or Design Rules

5 5 Lambda-based p-well rules  These rules are only representative and are the result of averaging a large number of processes.  The rules are defined in terms of:  Feature sizes  Separations and overlaps.

6 6 Mask No. 1:Thinox

7 7 Mask No. 2: P-well

8 8 Mask No. 3: Poly

9 9 Mask No 4: P-plus

10 10 Mask No 5: Contact

11 11 Mask No 5: Contact

12 12 Contact No 6: Metal

13 13 CMOS Design Rules  A layout resembles the top view of the IC  The layout design is 2-dimentional from the viewpoint of an IC designer.  in fact, designers normally do not control the depth dimension of an IC. The depth of a transistor source or the thickness of a metal wire is determined by the fabrication process.  The layout designer only decides the dimensions and locations of the transistors and interconnects them into the target circuit.  The minimum feature size of a technology is typically denoted by the narrowest width of a polysilicon wire that it can produce.  For instance, if the narrowest polysilicon wire in a technology is 1  m wide, it is called 1  m technology.  Design rules capture the physical limitations of a fabrication process.  Design rules release designers from the details of fabrication so they can concentrate on the design instead.

14 14 CMOS Design Rules  In -based design rules (developed by Mead and Conway) the minimum feature size is 2   For a 2  m technology, =1  m  Different fabrication technologies apparently require different rules.  Drawbacks of scalable design rules: the layout produced according to scalable design rules are often larger than necessary.  For example, a minimum spacing of 4  m may be ordered although in reality 3.2  m is sufficient.

15 15 MOSIS Design rules  Scalable -based design rules are used in MOSIS projects.  http//:www.mosis.org  A subset of MOSIS scalable CMOS (SCMOS) design rules is used to provide an overview of their use.

16 16 Layout Examples Example 1: symbolic layout for and inverter According to -based design rules, the smallest transistor channel is 2 long and 3 wide (the minimum width of diffusion region). However, in the following figure the width of transistor has been increased to 4 so that a diffusion contact (4 X 4 required) can be readily made. This 2 X 4 transistor is referred as the minimum size transistor. An inverter formed of minimum size transistors is called a minimum size inverter. Area: 42 X 15 = 630 2 Stick diagram

17 17 Example 3.1 :Alternative layouts for inverter Layout Examples Area of both: 40 X 18 = 720 2


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