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EE141 © Digital Integrated Circuits 2nd Manufacturing 1 Manufacturing Process -II Dr. Shiyan Hu Office: EERC 518 Adapted and modified from Digital Integrated Circuits: A Design Perspective by Jan M. Rabaey, Anantha Chandrakasan, and Borivoje Nikolic. EE4271 VLSI Design
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EE141 © Digital Integrated Circuits 2nd Manufacturing 2 2 Challenge Illumination source Mask Objective Lens Aperture Wafer 193nm 45nm
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EE141 © Digital Integrated Circuits 2nd Manufacturing 3 3 Mask v.s. Printing 0.25µ0.18µ 0.13µ 90-nm65-nm Layout What you design is NOT what you get!
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EE141 © Digital Integrated Circuits 2nd Manufacturing 4 Motivation Chip design cannot be fabricated Gap –Lithography technology: 193nm wavelength –VLSI technology: 45nm features Lithography induced variations –Impact on timing and power l Even for 180nm technology, variations up to 20x in leakage power and 30% in frequency were reported. Technology node 130nm90nm65nm45nm Gate length (nm) Tolerable variation (nm) 905.3533.75352.5282 Wavelength (nm) 248193193193
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EE141 © Digital Integrated Circuits 2nd Manufacturing 5 5 Gap: Lithography Tech. v.s. VLSI Tech. 193nm 28nm, tolerable distortion: 2nm Increasing gap Printability problem (and thus variations) more severe!
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EE141 © Digital Integrated Circuits 2nd Manufacturing 6 Design Rules
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EE141 © Digital Integrated Circuits 2nd Manufacturing 7 Design Rules Interface between designer and process engineer Guidelines for constructing process masks Unit dimension: Minimum line width scalable design rules: lambda parameter absolute dimensions (micron rules)
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EE141 © Digital Integrated Circuits 2nd Manufacturing 8 Lambda Rule Every distance in layout rules is specified by lambda Given a process, lambda is set to a specific value. Process technology is defined using minimum line width. 0.25um technology means minimum line width is 0.25um. Lambda=minimum line width/2. For a 0.25um process, lambda=0.125um In practice, scaling is often not linear. Industry usually uses micron rule and lambda rule is used only for prediction/estimation of the impact of technology scaling to a design.
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EE141 © Digital Integrated Circuits 2nd Manufacturing 9 Layers in 0.25 m CMOS process
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EE141 © Digital Integrated Circuits 2nd Manufacturing 10 Intra-Layer Design Rules Metal2 4 3 Rules are used to mitigate fabrication error
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EE141 © Digital Integrated Circuits 2nd Manufacturing 11 Transistor Layout
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EE141 © Digital Integrated Circuits 2nd Manufacturing 12 Layout Editor
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EE141 © Digital Integrated Circuits 2nd Manufacturing 13 Design Rule Checker poly_not_fet to all_diff minimum spacing = 0.14 um.
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EE141 © Digital Integrated Circuits 2nd Manufacturing 14 Some Packages
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EE141 © Digital Integrated Circuits 2nd Manufacturing 15 Wire Bonding (not printed) Bond wire
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EE141 © Digital Integrated Circuits 2nd Manufacturing 16 Imprinted Tape-Automated Bonding Disadvantage: Must place I/O pins at the specific locations (i.e., around the boundary on the die).
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EE141 © Digital Integrated Circuits 2nd Manufacturing 17 Flip-Chip Bonding Flip-Chip places connection across the chip rather than around boundary. The bond wire is replaced with solder bump balls directly placed on the die surface Chip is flipped upside down Carefully align to package Heat to melt solder bump balls
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